High performance thin crystalline silicon solar cell grown on silicon-on-insulator

Murcia, C. Paola; Hao, Ruiying; Biegala, Tom; Honsberg, Christiana B.; Barnett, Allen

doi:10.1109/pvsc.2009.5411219

Cited by 2 publications

(3 citation statements)

References 3 publications

(4 reference statements)

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“…Murcia et al [3] proposed a patterned emitter design that has an advantage on passivation properties and reduction of junction area. Ok et al [6] realized an interdigitated front grid structure and prepared cells through a set of photolithography processes.…”

Section: S Olar Cells Integrated On Silicon-on-insulator (Soi)mentioning

confidence: 99%

Ultrathin Crystalline Silicon Heterojunction Solar Cell Integrated on Silicon-on-Insulator Substrate

Duan

Bian

et al. 2015

IEEE Trans. Electron Devices

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To achieve power generation on IC chips, a hydrogenated amorphous silicon (a-Si:H)/crystalline silicon (c-Si) heterojunction solar cell was designed and fabricated on silicon-on-insulator substrate, where a 9-µm epitaxial p-type c-Si layer served as light absorption layer and the buried SiO 2 as back surface passivation layer. It was found that a 1-µm heavily doped thin p + layer was vital for improving the cell performances. Efficiency up to 12.7% with an open-circuit voltage of 679.7 mV was achieved on a 1.0-cm 2 square cell. The device performance was also investigated by annealing at different temperatures. The results suggested that a relatively large thickness of a-Si:H and transparent conductive oxide layers could improve thermal stability of the solar cells at temperature above 300°C.Index Terms-Power generation, silicon heterojunction (SHJ) solar cell, silicon on insulator (SOI), thermal stability.

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Section: S Olar Cells Integrated On Silicon-on-insulator (Soi)mentioning

confidence: 99%

Ultrathin Crystalline Silicon Heterojunction Solar Cell Integrated on Silicon-on-Insulator Substrate

Duan

Bian

et al. 2015

IEEE Trans. Electron Devices

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“…Previous work has explored the use of dielectrics as part of electrical interfaces by using silicon on insulator (SOI) crystalline substrates [6,8]. Such designs aim to reduce recombination and dark saturation current in order to increase open circuit voltage.…”

Section: Microelectronic Approachmentioning

confidence: 99%

“…Fabrication of thin crystalline silicon solar cells based on epitaxial absorbers is cumbersome and critical parameters cannot be easily measured. Different approaches to a high performance thin silicon solar cell have been reported before [1][2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Diagnostic structures for epitaxial thin silicon solar cells

Murcia

Hao

Creazzo

et al. 2010

2010 35th IEEE Photovoltaic Specialists Conference

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The value of a high performance thin silicon solar cell is based on high open circuit voltage (Voc) which is highly dependent upon surface and interface recombination. A microelectronic approach with the series and parallel fabrication of different device structures is presented. This approach includes the fabrication of planar solar cells based on different solar cell designs that maximize Voc. Subsequently, using the same solar cell design, more advanced epitaxial growth test structures were fabricated on the same substrate to understand recombination losses and Voc. In high performance thin silicon solar cells, Voc is highly sensitive to surface recombination. Achieving a good surface and interface passivation in epitaxial silicon solar cells is a challenge, especially for the absorber back surface. In this work, we used test structures embedded in the solar cells to independently optimize Voc and the back surface of a thin epitaxial absorber as well as other silicon interfaces. Most epitaxial thin silicon solar cells are fabricated with in-situ processes that lead to difficulties in the independent optimization of such surfaces.To contribute to the design space in thin silicon solar cells, we tested basic device designs and test structures that lead to high Voc. The design of basic structures is important to measure parameters that limit voltage. This is a diagnostic tool for the fabrication of high performance thin silicon solar cells. This work reports device results that exhibit a path to high open circuit voltage, determined by device design, interface recombination, and bulk lifetime. With independent optimization of parameters that limit Voc and therefore performance, this work contributes to the understanding of thin silicon solar cells.

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High performance thin crystalline silicon solar cell grown on silicon-on-insulator

Cited by 2 publications

References 3 publications

Ultrathin Crystalline Silicon Heterojunction Solar Cell Integrated on Silicon-on-Insulator Substrate

Ultrathin Crystalline Silicon Heterojunction Solar Cell Integrated on Silicon-on-Insulator Substrate

Diagnostic structures for epitaxial thin silicon solar cells

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