High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film

Pulsed laser crystallization of silicon–germanium films

“…Pulsed laser induced crystallization of silicon films has been precisely investigated and widely applied to fabrication of polycrystalline silicon thin film transistors (poly-Si TFTs) [4][5][6][7][8][9][10]. The electrical and structural properties of polycrystalline silicon (poly-Si) thin films formed by pulsed laser irradiation have been reported.…”

Infrared semiconductor laser irradiation used for crystallization of silicon thin films

“…Laser crystallization processes using pulsed excimer lasers have been widely used for the mass production of formation of poly-Si films at a low processing temperature because laserinduced rapid and local heating achieve crystallization of silicon films with a low heating energy [3,4]. However, there are serious problems of a low lasing emitting efficiency of 1%, low gas lifetime, and high running costs in operation of pulsed excimer laser.…”

Crystallization of silicon films by rapid joule heating method

“…Many technologies have been reported for the formation of polycrystalline silicon films at low processing temperature [1][2][3][4][5][6][7][8][9][10]. Lateral crystalline grain growth is very important for the formation of large crystalline grain in thin films.…”