2006
DOI: 10.1109/lmwc.2006.885608
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High Performance Spiral Inductor on Deep-Trench-Mesh Silicon Substrate

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Cited by 11 publications
(3 citation statements)
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“…However, the PGS decreases the self‐resonant frequency due to increased capacitive coupling between the inductor metal line and the conductive shield pattern [6]. To reduce the capacitive coupling, a low dielectric material is inserted under the inductor, and a micromachine method has been introduced [7, 8]. Although effective, these approaches have the disadvantage of complex processes.…”
Section: Circuit Designmentioning
confidence: 99%
“…However, the PGS decreases the self‐resonant frequency due to increased capacitive coupling between the inductor metal line and the conductive shield pattern [6]. To reduce the capacitive coupling, a low dielectric material is inserted under the inductor, and a micromachine method has been introduced [7, 8]. Although effective, these approaches have the disadvantage of complex processes.…”
Section: Circuit Designmentioning
confidence: 99%
“…This methodology, based on the set of algorithms (software routine) is devised in such a way that it is technology node independent. Particular care is taken in inductor modelling and the design of monolithic spiral inductors [5]. Successful designs using this method have previously been presented for a 0.35‐μm CMOS [6] and 0.35‐μm SiGe BiCMOS [7, 8] processes.…”
Section: Introductionmentioning
confidence: 99%
“…Many studies have tried to solve this problem and improve the inductor quality by employing toroidal [5] [6] and solenoidal [7] structures or removing the silicon under the spiral [8] [9] for example. However, all of them make use of unconventional processing or post-processing techniques not suitable for large-volume production.…”
Section: Introductionmentioning
confidence: 99%