High-performance solution-processed Ti₃C₂T_x MXene doped ZnSnO thin-film transistors via the formation of a two-dimensional electron gas

Abstract

MXenes are a large class of two-dimensional (2D) materials widely studied recently since they have good water solubility and be able to tune the work function (WF) of the materials...

Enhanced Electrical Performance and Bias‐Stress Stability of Solution‐Processed Bilayer Metal Oxide Thin‐Film Transistors

“…[ 13,14 ] In addition, the IZO transistors exhibit high mobility of 9.34 ± 0.52 cm 2 V −1 s −1 , but relatively high turn‐off current, which should be attributed to the increased carrier concentration in the IZO film. [ 10 ] Interestingly, when the IGZO/IZO bilayer channel structure is used, the maximum carrier mobility of 8.93 ± 0.43 cm 2 V −1 s −1 is realized (IGZO/IZO‐4) and the highest current on/off ratio of 1.67 × 10 7 is achieved (IGZO/IZO‐3).…”

“…[ 8,9 ] Recently, strategies have been proposed to balance the trade‐off between carrier mobility and bias‐stress stability by constructing the bilayer AOS structures. [ 7,10 ] Nevertheless, comprehensive investigation and understanding of the bilayer oxide TFTs in various aspects are still far from required. In addition, high‐performance bilayer AOS TFTs with low operation voltage are highly desired for low‐power circuits.…”

Fully Sprayed Metal Oxide Transistors Utilizing Ti3C2Tx MXene Contacts

“…The corresponding gain values (−∂ V OUT /∂ V IN ) at different V DD supply voltages are presented in Figure b, showing that the circuit has exhibited proper inverter characteristics with good noise margins. For a supply voltage of V DD = 2 V, a maximum gain of 5.83 V/V was obtained, highlighting the promising potential of this technology for practical application in large-area electronics. ,, …”

“…For a supply voltage of V DD = 2 V, a maximum gain of 5.83 V/V was obtained, highlighting the promising potential of this technology for practical application in large-area electronics. 14,66,67 ■…”

Machine Learning Driven Channel Thickness Optimization in Dual‐Layer Oxide Thin‐Film Transistors for Advanced Electrical Performance

“…[18][19][20][21] Among several studies, a dual-layer structure has been raised for the purpose of improving field effect mobility, [22][23][24] but it faces challenges due to the complexity of the correlation between two oxide semiconductor layers. To solve these difficulties, research on new mechanisms such as 2D electron gas, [25][26][27][28] novel oxide materials, [29][30] and oxide semiconductor deposition processes like homojunction have been conducted. [31] However, these preceding studies demand a lot of labor and time because they require various experiments and analysis data, and sometimes go through trial and error based on human intuition.…”