High performance solution-processed amorphous zinc tin oxide thin film transistor

Seo, Seok-Jun; Choi, Chang Soon; Hwang, Young Hwan; Bae, Byeong‐Soo

doi:10.1088/0022-3727/42/3/035106

Cited by 251 publications

(183 citation statements)

References 31 publications

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“…The SS value was as low as 0.27 V/decade for 2.5Z1T channel as shown in inset of Fig. 3b and this value is comparable or better than other reports for ZTO transistors 8,9,11 The minimum off-current was generally in the range of 10 -13 -10 -14 A, which is below the maximum level of 10 -12 A for flat-panel displays. 1 The Zn/Sn ratio clearly influenced the mobility of the transistors.…”

supporting

confidence: 77%

“…The I ON /I OFF ratio was as high as ~10 9 -10 10 , which is comparable to or better than other reports for well-6 behaved transistors. 9,11 The I ON /I OFF ratio derived from the transfer curve for V DS of 20 V showed clear decreasing trend with decreasing Zn/Sn ratio; it was ~10 9 -10 10 for 3Z1T, 2.5Z1T, and 2Z1T and it decreased to ~10 7 -10 8 and further to ~10 6 for 1Z1T and 1Z2T, respectively. Turn-on voltage, 5 the gate voltage at the onset of the initial sharp increase in a transfer curve, was mainly at 0 -3 V except 1Z2T transistor, which was largely negative-shifted (-9 V).…”

mentioning

confidence: 95%

“…[5][6][7][8][9] Other growth methods, such as pulsed laser deposition 10 , solution deposition 11 , inkjet printing 12 , and combustion 13 , have been reported. However, growth of ZTO by atomic layer deposition (ALD) and detailed study of its performance in devices have remained largely unexplored up to now.…”

mentioning

confidence: 99%

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Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

Heo¹,

Kim²,

Gordon

2012

Appl. Phys. Lett.

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supporting

confidence: 77%

mentioning

confidence: 95%

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Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

Heo¹,

Kim²,

Gordon

2012

Appl. Phys. Lett.

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“…For example, metal oxides such as zinc oxide (ZnO) [17][18][19][20][21][22] , indium oxide (In 2 O 3 ) [23][24] , indium gallium oxide (InGaO) [25] , indium zinc oxide (InZnO) [18][19][20][21][22][23][24][25][26] and zinc tin oxide (ZnSnO) [27] have been synthesised using soluble precursors and implemented into TFT structures. Despite the process simplicity, excellent charge carrier mobilities have been achieved, clearly demonstrating the significant potential of this alternative processing methodology.…”

mentioning

confidence: 99%

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs

et al. 2010

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The ever increasing demand for high performance electronic devices that can be fabricated onto large-area substrates employing low manufacturing cost techniques has given a boost to the development of alternative types of semiconductor materials, such as organics and metal oxides, with desirable physical characteristics that are absent in their traditional inorganic counterparts. Metal oxide semiconductors, in particular, are very attractive for implementation into thin-film transistors (TFTs) [1][2] mainly because of their high charge 2 carrier mobility, high optical transparency, excellent chemical stability, mechanical stress tolerance and processing versatility [3][4][5] . Oxide semiconductors are usually grown using vacuum-based techniques such as sputtering [6][7][8] , pulsed laser deposition [9] , chemical vapour deposition [10] , and ion-assisted deposition [11][12] . Based on these methods, the synthesis of a wide range of metal oxide semiconductors with high charge carrier mobilities and low carrier concentration has been demonstrated [7] . Many of these materials have been investigated for applications in thin-film electronics where transistors with electron mobilities up to 140 cm 2 /Vs have been demonstrated [7,[11][12][13][14][15][16] . Despite the great promise however, the application of vacuum-based technologies for the deposition of complex oxide semiconductors suffers from incompatibility with large-area substrates and hence high manufacturing cost. To this end, the development of alternative deposition methods based on solution processing paradigms could provide a breakthrough in both cost and performance by marrying fabrication simplicity with high-throughput manufacturing.In recent years a wide variety of soluble precursors compounds have been examined as potential alternatives for the fabrication of oxide-based TFTs using large area deposition methods including spin casting, dip coating and spray pyrolysis. For example, metal oxides such as zinc oxide (ZnO) [17][18][19][20][21][22] , indium oxide (In 2 O 3 ) [23][24] , indium gallium oxide (InGaO) [25] , indium zinc oxide (InZnO) [18][19][20][21][22][23][24][25][26] and zinc tin oxide (ZnSnO) [27] have been synthesised using soluble precursors and implemented into TFT structures. Despite the process simplicity, excellent charge carrier mobilities have been achieved, clearly demonstrating the significant potential of this alternative processing methodology. Here we show how spray pyrolysis (SP) can be used for the deposition of doped ZnO films and the fabrication of high electron mobility TFTs onto large area substrates under ambient atmosphere. Doping is achieved by simple physical blending of the soluble precursor compounds in water or alcohol based solutions. Among the various dopants studied, transistors fabricated using Li doped ZnO were 3 found to yield the best performance with maximum electron mobility > 50 cm 2 /Vs and on/off current modulation ratio exceeding 10 6 .Preparation of the Li doped precursor solutions is described in th...

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“…5) showed promising properties such as mobilities N 1 cm 2 /Vs and on-off current ratios N10 8 which are comparable to those of amorphous silicon TFTs [11]. Annealing at 500°C resulted prejudicial in the device performance by reducing the mobilities to~0.5 cm 2 /Vs as well as the on-off current ratio to N 10 7 .…”

Section: Resultsmentioning

confidence: 84%

Influence of In and Ga additives onto SnO2 inkjet-printed semiconductor

et al. 2014

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This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research and education use, including for instruction at the authors institution and sharing with colleagues.Other uses, including reproduction and distribution, or selling or licensing copies, or posting to personal, institutional or third party websites are prohibited. Tin oxide is a multifunctional semiconductor that offers excellent capabilities in a variety of applications such as solar cells, catalysis and chemical sensors. In this work, tin-based semiconductors have been obtained by means of solution synthesis and inkjet, and compared to similar materials with In and Ga as additives. The effect of different thermal treatments after deposition is also studied. n-Type behavior with saturation mobility N 2 cm 2 /Vs has been observed, and suitability as a semiconductor for thin-film transistors (TFTs) demonstrated with on/off ratios of more than 8 decades. Both In and In-Ga additives are shown to provide superior environmental stability, as well as significant change from depletion to enhancement operation modes in TFTs.

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High performance solution-processed amorphous zinc tin oxide thin film transistor

Cited by 251 publications

References 31 publications

Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs

Influence of In and Ga additives onto SnO2 inkjet-printed semiconductor

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High performance solution-processed amorphous zinc tin oxide thin film transistor

Cited by 251 publications

References 31 publications

Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm2/Vs

Influence of In and Ga additives onto SnO2 inkjet-printed semiconductor

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Product

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Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs