High-performance second-harmonic operation W-band GaAs Gunn diodes

Teng, Shih-Chieh; Goldwasser, R. E.

doi:10.1109/55.34726

Cited by 46 publications

(14 citation statements)

References 3 publications

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“…The millimeter wave signal is coupled out by the probe transition. The oscillator circuit dimension is 15.7×9 mm 2 and the whole test cavity dimension is 25×15×19 mm 3 .…”

Section: Resultsmentioning

confidence: 99%

A Novel SIW-Based Planar W-Band GaAs Gunn Harmonic Oscillator

Liu

Tang

Cao

2010

J Infrared Milli Terahz Waves

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Based on the substrate integrated waveguide (SIW) technology, a novel W-band low phase noise GaAs Gunn planar harmonic oscillator is developed in this paper. The technique of harmonic extraction from Gunn diodes and SIW resonant cavity structures are discussed in detail. Due to the high quality factor and planar structure of the SIW cavity resonator, the oscillator is characterized by some advantages such as low phase noise, small size, low cost and planar integration. The measured phase noise is −108.56 dBc/Hz at 1 MHz offset and the output power is more than 9 dBm at 94.78 GHz. A 300 MHz of linear tuning range with power fluctuation less than 1.5 dB is observed when the Gunn diode is biased from 4 to 5.3 V.

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“…The millimeter wave signal is coupled out by the probe transition. The oscillator circuit dimension is 15.7×9 mm 2 and the whole test cavity dimension is 25×15×19 mm 3 .…”

Section: Resultsmentioning

confidence: 99%

A Novel SIW-Based Planar W-Band GaAs Gunn Harmonic Oscillator

Liu

Tang

Cao

2010

J Infrared Milli Terahz Waves

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“…Fundamental-mode operation of Gunn devices in a reduced-height post-coupled waveguide cavity was reported up to millimeter-wave frequencies, e.g., for a GaAs Gunn device at 84 GHz (33) and an InP Gunn device at 126 GHz (34). RF power levels (and corresponding dc-to-RF conversion efficiencies) of 420 mW (6%) at 35 GHz (21), 280 mW at 45 GHz (21), 150 mW at 60 GHz, and 110 mW (2.8%) at 70 GHz (35) were reported from flat-profile GaAs Gunn devices in the fundamental mode. A sharp decline in the dc-to-RF conversion efficiencies of devices operating in the fundamental-mode presages the above frequency limits for GaAs or InP Gunn devices.…”

Section: Flat Active Region With Ohmic Cathode Contactmentioning

confidence: 99%

“…However, more complicated circuits with precise mechanical dimensions are necessary if wide-range frequency tuning is to be implemented. As an example for second-harmonic power extraction, RF power levels (and dc-to-RF conversion efficiencies) of 123 mW (3.1%) at 83 GHz, 96 mW (2.7%) at 94 GHz were measured with GaAs Gunn devices (35).…”

Section: Flat Active Region With Ohmic Cathode Contactmentioning

confidence: 99%

Gunn or Transferred‐Electron Devices

Eisele

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Transferred‐electron devices are the only microwave devices whose operation is solely based on the bulk‐material properties of semiconductors such as GaAs or InP. These devices are mainly employed in low‐noise medium‐power oscillators up to high millimeter‐wave frequencies. James B. Gunn was the first scientist to observe the underlying physical phenomenon in an experiment and, therefore, these devices are often referred to as Gunn devices. This chapter describes the principles of operation, basic fabrication technologies, and common oscillator circuits for them. Different device structures for performance optimization, optimization procedures, and simulation tools are discussed. The chapter also summarizes the current state of the art of Gunn devices and the outlook covers the prospects of more recent device structures and material systems.

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“…Recently, Gunn diodes are investigated in order to generate signals at millimeter-wave where the attention has been drawn for adaptive cruise control systems and military radar sensors [2]. In practice, InP Gunn diodes operate in fundamental mode up to 110 GHz [3][4], whereas GaAs Gunn diodes operate in second harmonic mode at 94 GHz [5][6][7]. In addition, InP Gunn diodes show higher RF power levels compared with GaAs.…”

Section: Introductionmentioning

confidence: 99%