High-performance photodetectors based on Sb₂S₃ nanowires: wavelength dependence and wide temperature range utilization

Abstract

Photodetectors which can work at both low and high temperatures are very important for the development of practical optoelectronic devices. Many studies have shown that low-dimensional semiconductors have more advantages in optoelectronic applications than their bulk forms. Here, we report the preparation of high-quality SbS nanowires (NWs) by a sulphur-assisted vapour transport method. The corresponding individual SbS NW based photodetectors exhibit good photoresponse in a wide spectral range from about 300 to 800 nm. The optimal photoresponse values are measured under the illumination of a 638 nm laser at room temperature: a high current ON/OFF ratio of about 210, a spectral responsivity of 1152 A W, a detectivity of 2 × 10 Jones, and rise and fall times of about 37 ms, respectively. More importantly, the temperature dependence of the electrical conductivity of SbS shows three variation regions which can be attributed to the interaction between the carrier mobility and carrier concentration. The temperature dependence of the photoresponse of the photodetectors shows that they have good adaptability to temperature, and they worked very well at a wide temperature range from 8 to 420 K. Our results indicate that low-dimensional SbS crystals are promising candidates for new multifunctional optoelectronic devices.

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

“…Inset: The optical microscopy image of the measured PD. Reproduced with permission . Copyright 2009, ROYAL SOCIETY OF CHEMISTRY.…”

“…V‐VI semiconductor nanowire is another type of 1D material, which is widely used in the field of optoelectronics such as PDs . Photoelectric devices prepared based on Bi 2 S 3 NWs, Sb‐Bi‐Se NWs, Sb 2 Se 3 NWs, and so on, all exhibited excellent characteristics; for example, the high spectrum responsivity of Sb‐Bi‐Se NWs and the ultra‐fast response time of Bi 2 S 3 NWs .…”

“…Photoelectric devices prepared based on Bi 2 S 3 NWs, Sb‐Bi‐Se NWs, Sb 2 Se 3 NWs, and so on, all exhibited excellent characteristics; for example, the high spectrum responsivity of Sb‐Bi‐Se NWs and the ultra‐fast response time of Bi 2 S 3 NWs . Moreover, Sb 2 S 3 NWs exhibit not only a good light response over a wide spectral range, but also excellent properties over a wide temperature range . The anisotropy of Sb 2 Se 3 NWs exhibits its application in polarized light measurement .…”

Synthesis of Water-Soluble Antimony Sulfide Quantum Dots and Their Photoelectric Properties

“…Recently, solution-processed planar heterojunction solar cells with a simple structure achieved a very satisficing PCE of 4.3%, in which an Sb 2 S 3 film was prepared by conventional spin-cast technique with a precursor containing Sb 2 O 3 , CS 2 , and n-butylamine [7]. Nanostructure Sb 2 S 3 synthesized by solution method was wildly applied for high-performance photodetectors [11–13]. Sb 2 S 3 NW-based photodetectors exhibited a good photo-response in a wide spectral range from 300 to 800 nm.…”

“…Sb 2 S 3 NW-based photodetectors exhibited a good photo-response in a wide spectral range from 300 to 800 nm. Especially at 638 nm, they showed optimal values with a high current ON/OFF ratio about 210, a spectral responsivity of 1152 A/W, a detectivity of 2 × 10 13  Jones, and the rise and fall times of about 37 ms [11]. Solution-processed Sb 2 S 3 nanorod was usually used as an efficient photocatalyst for dye degradation [14] and high-performance sodium-ion batteries [15].…”