Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

Abstract

Low‐dimensional (including two‐dimensional [2D], one‐dimensional [1D], and zero‐dimensional [0D]) semiconductor materials have great potential in electronic/optoelectronic applications due to their unique structure and characteristics. Many 2D (such as transition metal dichalcogenides and black phosphorus) and 1D (such as NWs) materials have demonstrated superior performance in field effect transistors, photodetectors (PDs), and some flexible devices. And in some hybrid structures of 0D materials and 1D or 2D materials, the modification of 1D and 2D devices by 0D materials is embodied. This type of hybrid heterostructure has a larger performance optimization compared with the original. In the application of PDs, the variety of low‐dimensional materials and properties enable wide‐spectrum detection from ultraviolet UV to infrared, which provide a potential option for PDs under various conditions. For flexible electronic devices, high performance and mechanical stability are two important features. Low‐dimensional materials offer unparalleled advantages in flexible devices. In this review, we will focus on the various low‐dimensional materials that have been extensively studied and their applications in the electronics/optoelectronic and flexible electronics. From the composition and lattice structure of materials (including alloys) to the construction of various devices and heterostructures, we will introduce their application and recent development under various conditions. These works can provide valuable guidance for the construction and application of more high‐performance and multifunctional devices.

Toward Wafer‐Scale Production of 2D Transition Metal Chalcogenides

“…TMCs possess a descent mobility (up to 200 cm 2 V -1 s -1 ), high on/ off ratios (≈10 8 ), low subthreshold slope (70-75 mV dec -1 close to the theoretical limit 60 mV dec -1 , monolayer MoS 2 ), [119][120][121] holding promises for application in the low-standby power integrated circuits. Wafer-scale TMCs material is key to the application in electronics and optoelectronics.…”

“…[1][2][3][4][5][6] Since the 1980s, the significant role of dimensionality has been recognized apart from the bulk phase, inspiring the swift development of low-dimensional materials (0D, 1D, 2D). [7][8][9][10] The realm of 0D quantum dots, [11][12][13][14] 1D nanowire, [15][16][17][18][19] nanotube, [20][21][22][23][24] etc., has become hot research spots in succession. However, 2D materials remained to be a silent zone somehow.…”

Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics

“…Due to the outstanding light‐matter interaction, good air stability, and efficient photocarrier generation, diverse TMDCs materials have been explored and designed for high‐performance photodetectors 196,197 . The diverse optical properties of 2D TMDCs, with their bandgaps from the IR to the near UV energy, the direct and indirect transitions depending on the number of layers where the direct bandgap of monolayer TMDCs leads to efficient light emission from these materials, 198 their large excitonic binding energies 199 and exotic optical properties, such as valley coherence and valley‐selective circular dichroism 200 are the unique features that have propelled intensive effort toward developing novel optical devices based on these materials.…”

Recent Progress in Anisotropic 2D Semiconductors: From Material Properties to Photoelectric Detection

“…Similarly, the recovery time of the photodetector is defined by the time what the photocurrent changes from 90% to 10% without illumination. [ 106 ] An excellent photodetector is considered response times of microseconds level.…”