High performance of 10-Gb/s APD/preamplifier optical-receiver module with compact size

Matsuda, Hidetaka; Miura, Akira; Okamura, Yasuyuki; Irie, Hiroki; Ito, K.; Toyonaka, T.; Takahashi, Hidehiro; Harada, Tomohisa

doi:10.1109/lpt.2002.806099

Cited by 10 publications

(6 citation statements)

References 11 publications

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“…The measured sensitivities of hybrid APD-based photoreceivers from [12], [13], [18], and [28]- [31] are plotted and show a good fit to the simulated line. It should be noted that a waveguide APD, which removes the tradeoff between transit times and absorption efficiency, is used to achieve the record result of 19 dBm at 40 Gb/s [12].…”

Section: R Esults and Discussionmentioning

confidence: 82%

“…Data from [6] and [24] for the HPT, [6], [7], and [25]- [27] for the PIN-HBT, and [12], [13], [18], [28]- [31] for the APD-HBT have been plotted to compare with experimental data. The differences between calculation and experimental data up to 20 Gb/s are within 1 dB for the HPT and PIN-HBT receivers, which seems reasonable given that measured sensitivity values can vary by as much as 1 dB between identical channels of a PIN-HBT photoreceiver in [32].…”

Section: R Esults and Discussionmentioning

confidence: 99%

“…This allows the effects of increasing complexity of the receiver from the HPT to a shared layer scheme PIN-HBT, a PIN-HBT with separate PIN and collector layer, and a proposed monolithic APD-HBT structure to be compared. The APD-HBT combination is considered since a hybrid APD-HBT has been shown experimentally to achieve high sensitivity [18]. The APD could be integrated on the same wafer as the HBT if the APD structure is grown first, followed by a buffer layer, and then the HBT layer, as illustrated in Fig.…”

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confidence: 99%

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Large-Signal Charge Control Modeling of Photoreceivers for Applications up to 40 Gb/s

Helme

Houston

Tan

2009

IEEE J. Quantum Electron.

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Abstract-A charge control model was used to simulate the sensitivity and responsivity in a range of photodetector configurations including heterojunction bipolar phototransistors (HPTs), PIN-HBT, and APDs. Our simulations enabled for the first time a direct comparison of the performance between these photodetectors to be made. Simulations have been performed at bit rates from 2 to 40 Gb/s using various combinations of device design parameters (layer thickness, source resistance, and dc base voltage).For a BER =1 0 9 at 40 Gb/s the best sensitivity of approximately 20 dBm was achieved using an optimized APD-HBT configuration, followed by sensitivities of approximately 14 dBm using optimized PIN-HBTs and HPTs. These results were found to agree well with published experimental data.

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Section: R Esults and Discussionmentioning

confidence: 82%

Section: R Esults and Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

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Large-Signal Charge Control Modeling of Photoreceivers for Applications up to 40 Gb/s

Helme

Houston

Tan

2009

IEEE J. Quantum Electron.

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“…Since their optical/electrical bandwidth and conversion gain dominate the entire characteristics of the receivers [6], improving these crucial parameters are paramount in high data rate capability of the optical systems. For photoreceiver circuits' implementations, HEMTs [3,[5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Low‐cost InP–InGaAs PIN–HBT‐based OEIC for up to 20 Gb/s optical communication systems

Muttlak

Kostakis²,

Abdulwahid

et al. 2019

IET Optoelectronics

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A detailed study of the performance analysis of a low cost PIN/HBT optoelectronic integrated circuit is described. Measured and of 54 and 57GHz for 10×10µm 2 HBTs were achieved for such a large emitter size. The base and collector regions of the transistor were utilized to form a PIN photodiode which has a dc responsivity and quantum efficiency of 0.5 A/W and 0.45 respectively without antireflection coating at a wavelength of 1.55µm. For both active devices, a model was realized taking all parasitic and physical-based impacts into account, for example equivalent circuit of the pads surrounding the devices and transit delay time across the collector depletion region. The simulation results of the discrete passive and active elements showed good agreement with experimental measurements. The OEIC module was implemented in Keysight-advanced design system software with a three stage preamplifier which has a transimpedance gain of 40dBΩ and a-3dB bandwidth of 18GHz. This corresponds to a transimpedance-gain product of 1.8THz. A series peaking inductor technique was used in the design, contributing to an enhancement in the opto-electrical bandwidth of >60%. The optical/electrical response offers a bandwidth of ~15GHz, adequate for up to 20 Gb/s data rate operation.

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“…Recently, an optical receiver front end at 10 Gbit/s has been developed and has been improved for lower cost for commercialization [1,2], for size reduction [3], for a lower voltage operation [4], and for a multifunctional operation [5]. One of the future research topics is productization of 40 Gbit/s transmission.…”

Section: Introductionmentioning

confidence: 99%

Noise-matched optical receiver front-end design and experiment

Kojima

2005

Electron. Comm. Jpn. Pt. I

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SUMMARYIn this paper, the noise-matching theory used for microwave amplifiers is introduced into the design of a general high-speed optical receiver front-end circuit. The trade-off of the low-noise and broadband design of the front-end circuit is clarified quantitatively. As a design example, a commercially available PIN photodiode and HJ-FET (f max = 60 GHz) are used and a 20 Gbit/s noisematched PIN-FET optical receiver front end at an optical wavelength of 1.55 µm is designed. A trans-impedance gain of 53 ± 3 dBΩ, bandwidth of 17 GHz, sensitivity of -14 dBm in the simulation, and dynamic range of 16 dB are obtained.

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High performance of 10-Gb/s APD/preamplifier optical-receiver module with compact size

Cited by 10 publications

References 11 publications

Large-Signal Charge Control Modeling of Photoreceivers for Applications up to 40 Gb/s

Large-Signal Charge Control Modeling of Photoreceivers for Applications up to 40 Gb/s

Low‐cost InP–InGaAs PIN–HBT‐based OEIC for up to 20 Gb/s optical communication systems

Noise-matched optical receiver front-end design and experiment

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