Large-Signal Charge Control Modeling of Photoreceivers for Applications up to 40 Gb/s

Abstract

Abstract-A charge control model was used to simulate the sensitivity and responsivity in a range of photodetector configurations including heterojunction bipolar phototransistors (HPTs), PIN-HBT, and APDs. Our simulations enabled for the first time a direct comparison of the performance between these photodetectors to be made. Simulations have been performed at bit rates from 2 to 40 Gb/s using various combinations of device design parameters (layer thickness, source resistance, and dc base voltage).For a BER =1 0 9 at 40 Gb/s the best sensitivity of approximately 20 dBm was achieved using an optimized APD-HBT configuration, followed by sensitivities of approximately 14 dBm using optimized PIN-HBTs and HPTs. These results were found to agree well with published experimental data.

Impact of Collection Efficiency on the Optical Responsivity of Lattice Matched InP/InGaAs Heterojunction Phototransistors

“…Heterojunction phototransistors (HPTs) are attractive alternative optical detectors for replacing conventional photodiodes in front end of most modern high-speed optoelectronic monolithic microwave/millimeter-wave integrated circuit (OEMMIC) photoreceivers. 1,2) Combined advantages of detection as well as amplification, in a single device are essential for chip size reduction and in turn cost of receivers. The superiority of HPTs in terms of intrinsic optical gain with respect to p-i-n and Schottky photodiodes and lack of excessive noise compared to avalanche photodiodes (APDs) is well established.…”