High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design

Chiu, Hsien‐Chin; Chang, Yi-Sheng; Li, B. H.; Kao, Hsuan‐Ling; Hu, Chih‐Wei; Xuan, Rong

doi:10.1109/jeds.2018.2789908

Cited by 40 publications

(15 citation statements)

References 20 publications

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“…The holes in the p-GaN layer were emitted to the gate metal, so the holes in p-GaN would be reduced. When the VGS is switched back to the positive bias, this effect may influence the hole injection because the holes in the p-GaN layer For the evaluation of gate lag behavior, we adopted pulse measurement system AM241 [14]. Figure 6a displays the pulsed I-V characteristics of both devices that were switched on from the off state with a V DSQ of 0 V, the V GSQ value ranging from 0 to −15 V, a voltage step of −5 V at room temperature, and an on-state gate bias of 5 V. The device was switched on with a pulse width of 2 µs and a pulse period of 200 µs.…”

Section: Resultsmentioning

confidence: 99%

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

et al. 2020

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The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated. In this study, a Zr metal as a gate contact to p-GaN/AlGaN/GaN high mobility transistor (HEMT) was first applied to improve the hole accumulation at the high gate voltage region. In addition, the ZrN interface is also beneficial for improving the Schottky barrier with low nitrogen vacancy induced traps. The features of Zr are low work function (4.05 eV) and high melting point, which are two key parameters with p-GaN Schottky contact at reversed voltage. Therefore, Zr/p-GaN interface exhibits highly potential for GaN-based switching power device applications.

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Section: Resultsmentioning

confidence: 99%

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

et al. 2020

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“…This will remove excessive p-GaN, while chemically reacting with AlN to form AlF 3 , and provide a thin protective layer to prevent further etching into the AlGaN. 64 Another self-stop etching approach to this problem is through a repeated process called digital etching. The digital etching oxidizes approximately 4 nm thickness of the p-GaN surface to Ga 2 O 3 by introducing N 2 O plasma into the p-GaN layer using RIE.…”

Section: Fabrication Processmentioning

confidence: 99%

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Kim

Zhang

et al. 2020

Journal of Elec Materi

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Gallium nitride (GaN) power transistors have attracted significant interest in the power electronics industry over the past decade as the next-generation power semiconductor devices. GaN power transistors are suitable for high power and high frequency applications due to their higher electron mobility, temperature tolerance, electrical conductivity, critical breakdown electric field, and breakdown voltage compared to the conventional silicon-based transistors and other wide bandgap (WBG) power transistors. In particular, GaN-on-silicon (GaN-on-Si) technology has opened up the possibility of manufacturing high-performance, low-cost WBG power devices in silicon-compatible fabrication facilities. The first GaN power transistor structure to be developed was the normally-ON depletion mode (D-mode) device. It relies on the highly mobile two-dimension electron gas (2DEG) at the GaN/AlGaN epitaxial layers' interface to provide very low on-resistance. The normally-OFF enhancement mode (E-mode) GaN power transistor soon became available by controlling the 2DEG using various gate structures. This paper provides a review of the developments of GaN power transistors followed by a survey on current state-of-the-art GaN power technologies and applications, including comparisons between GaN growth substrates and developments of enhancement mode (E-mode) device structures and their process techniques. Moreover, developments of power module designs are also addressed, including gate driver designs and their requirements, and packaging techniques for power transistors and power modules.

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“…For the purpose of controlling the uniformity of threshold voltage, reducing the device leakage current and improving device reliability performance, more efforts have to be made to achieve To achieve high etching selectivity, some new structures have been developed. Chiu et al [70] reported that they added an AlN etching stop layer between p-GaN and AlGaN, that is, the p-GaN/AlN/AlGaN/GaN structure, to improve the p-GaN etching selectivity. With the BCl 3 and CF 4 gas mixture, the etching rate can be slowed down remarkably on AlN layer due to the non-volatility of AlF 3 .…”

Section: P-gan Gate Formationmentioning

confidence: 99%

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

et al. 2018

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GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

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High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

Cited by 40 publications

References 20 publications

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

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