High Performance InAs/${\rm In}_{0.53}{\rm Ga}_{0.23}{\rm Al}_{0.24}{\rm As}$/InP Quantum Dot 1.55 $\mu{\rm m}$ Tunnel Injection Laser

Bhowmick, Sishir; Baten, Zunaid; Frost, Thomas; Ooi, Boon S.; Bhattacharya, P.

doi:10.1109/jqe.2013.2290943

Cited by 69 publications

(40 citation statements)

References 40 publications

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“…Such minima in the value of a have been measured for InAs/InP QD lasers. 26,27 The trend of our data therefore suggests the presence of InGaN quantum dots in the gain region. The formation of self-organized islands in the InGaN disk region, which behave as quantum dots, has been confirmed by us by transmission electron microscopy and the observation of single photon emission.…”

Section: à2supporting

confidence: 54%

Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

Jahangir

Frost

Hazari

et al. 2015

Applied Physics Letters

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Section: à2supporting

confidence: 54%

Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

Jahangir

Frost

Hazari

et al. 2015

Applied Physics Letters

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“…The −3dB modulation bandw idth measured for I = 67 mA is 14.4 GH z. Courtesy of [114,115] Recently, Gilfert et al [114] reported a high gain and room temperature operation of InAs/InGaAlAs Qdots laser on (100) InP by growing in As 2 environment using MBE. A low internal loss of 4 cm -1 and high gain of 15 cm -1 per layer were reported, with lasing wavelength at 1.56 µm and threshold current density 1.95 kA/cm per layer and an extremely small PL linewidth of 25 meV at 10 K for their InAs/InP Qdots.…”

Section: Lasers On (100) Inp Substratementioning

confidence: 98%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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“…Typical vales of the LEF are from 4 to 6 for QWs while near zero values having been experimentally observed in QDs. [73][74][75] Results from our previously described quantum dot lasers on Si in Ref. 50 show LEFs as low as 0.25 as measured by sub-threshold amplified spontaneous emission (Fig.…”

Section: A Lasersmentioning

confidence: 99%

Perspective: The future of quantum dot photonic integrated circuits

et al. 2018

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Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS) foundries.

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High Performance InAs/${\rm In}_{0.53}{\rm Ga}_{0.23}{\rm Al}_{0.24}{\rm As}$/InP Quantum Dot 1.55 $\mu{\rm m}$ Tunnel Injection Laser

Cited by 69 publications

References 40 publications

Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Perspective: The future of quantum dot photonic integrated circuits

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