High performance Hybrid and Monolithic Backside Thinned CMOS Imagers realized using a new integration process

Munck, Koen De; Tezcan, Deniz Sabuncuoglu; Borgers, Tom; Ruythooren, Wouter; Moor, Piet De; Sedky, Sherif; Toccafondi, C.; Bogaerts, Jan; Hoof, Chris Van

doi:10.1109/iedm.2006.346979

Cited by 19 publications

(6 citation statements)

References 3 publications

(3 reference statements)

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“…Front-side illumination is the most common operation mode, however, backside illuminated photodetectors were demonstrated as well, both for layers grown on sapphire (illumination through the substrate) and on silicon, the latter requiring removal of the substrate, opaque in the ultraviolet. Backside illumination is also the common configuration in the hybrid imagers [8]- [12], as it is commonly reported for devices dedicated to other wavelength ranges (visible, infrared), integrated using flip-chip bonding technique [13]. For the EUV detection, the substrate has to be removed to allow backside illumination, as all materials are highly absorbing in this wavelength range.…”

Section: Introductionmentioning

confidence: 99%

EUV detectors based on AlGaN-on-Si Schottky photodiodes

Malinowski

Duboz²,

Moor

et al. 2011

SPIE Proceedings

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Photodetectors designed for the Extreme Ultraviolet (EUV) range with the Aluminum Gallium Nitride (AlGaN) active layer are reported. AlGaN layers were grown by Molecular Beam Epitaxy (MBE) on Si(111) wafers. Different device structures were designed and fabricated, including single pixel detectors and 2D detector arrays. Sensitivity in different configurations was demonstrated, including front-and backside illumination. The latter was possible after integration of the detector chips with dedicated Si-based readouts using high-density In bump arrays and flip-chip bonding. In order to avoid radiation absorption in silicon, the substrate was removed, leaving a submicron-thin membrane of AlGaN active layer suspended on top of an array of In bumps. Optoelectrical characterization was performed using different UV light sources, also in the synchrotron beamlines providing radiation down to the EUV range. The measured cut-off wavelength of the active layer used was 280 nm, with a rejection ratio of the visible radiation above 3 orders of magnitude. Spectral responsivity and quantum efficiency values were extracted from the measurements to enable comparison with the state-of-the-art UV photodetectors.

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Section: Introductionmentioning

confidence: 99%

EUV detectors based on AlGaN-on-Si Schottky photodiodes

Malinowski

Duboz²,

Moor

et al. 2011

SPIE Proceedings

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“…In advanced 3D systems like fully hybrid CMOS imager systems, where detector and read out circuit are pixel wise interconnected, very dense bump interconnects are needed [1,2]. Each unconnected bump will show up in the image as a black dot.…”

Section: Introductionmentioning

confidence: 99%

High density 20μm pitch CuSn microbump process for high-end 3D applications

Vos

Jourdain

Erismis

et al. 2011

2011 IEEE 61st Electronic Components and Technology Conference (ECTC)

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In this paper, we present a high yielding 20µm pitch CuSn electroplated microbump flip chip process. The 10µm diameter bumps are organized in an area array, consisting of 440 daisy chains of 1766 bumps each. The 2cm x 2cm flipchipped dies consist of about 1M bumps in total. The influence of processing materials like seed layer etchants and cleaning agents on the electrical performance of the daisy chains is discussed. Further Ti/Cu versus TiW/Cu seed layers for electroplating are compared. Finally inspection methods for tracing back electrically measured failures are screened. IntroductionIn advanced 3D systems like fully hybrid CMOS imager systems, where detector and read out circuit are pixel wise interconnected, very dense bump interconnects are needed [1,2]. Each unconnected bump will show up in the image as a black dot. Also for field-programmable gate arrays (FPGA) a high performing area array interconnect scheme is applicable.In this paper full thickness, 725µm, Si dies were assembled face to face by means of CuSn microbumps. For the assembly, a transient liquid phase (TLP) CuSn thermo compression bonding was used. The bonding temperature is relatively low, just above the melting temperature of the solder. The intermetallic formed after bonding has a higher melting point than of the solder itself. This enables the stacking of more than 2 dies with more flexibility for future hybrid imagers or more in general for 3D integrated systems.For the above mentioned high-end applications, where there is no room for built-in bump redundancy, the bump yield should be very high. In [3] we showed 90% yielding peripheral arrays with 25µm diameter CuSn bumps on a 40µm pitch. In this paper we drastically scaled down to bump diameters of 10µm on a 20µm pitch. The 2cm x 2cm flipchipped stack consist of about 1M bumps in total, with bumps organized in an area array. To evaluate this high number of bump interconnects for failure detection and to optimize bump yield, we used very long daisy chains. In the next section the test vehicle is described.Starting from the choice of TiW/Cu as seed layer for electroplating, the influence of processing aspects such as choice of seed layer etchants and cleaning agents on the microbump performance are being discussed. From the electrical evaluation of the daisy chains yield and bump resistance are extracted.

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“…Additionally, the proposed model is employed to investigate the reasons of spectral responses varied with different CMOS photodiodes. An epitaxial layer that can lower the crosstalk among pixels and degrade the spectral response in the infrared region is usually utilized in CMOS image sensors [19]. Moreover, the thickness and doping concentration of the epitaxial layer can be adjusted to achieve the desired spectral response for specific image sensors without color filters [20], [21].…”

Section: Column Multiplexermentioning

confidence: 99%

Color-Selective CMOS Photodiodes Based on Junction Structures and Process Recipes

Chen¹,

Liu²

2011

Advances in Photodiodes

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High performance Hybrid and Monolithic Backside Thinned CMOS Imagers realized using a new integration process

Cited by 19 publications

References 3 publications

EUV detectors based on AlGaN-on-Si Schottky photodiodes

EUV detectors based on AlGaN-on-Si Schottky photodiodes

High density 20μm pitch CuSn microbump process for high-end 3D applications

Color-Selective CMOS Photodiodes Based on Junction Structures and Process Recipes

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High performance Hybrid and Monolithic Backside Thinned CMOS Imagers realized using a new integration process

Cited by 19 publications

References 3 publications

EUV detectors based on AlGaN-on-Si Schottky photodiodes

EUV detectors based on AlGaN-on-Si Schottky photodiodes

High density 20&#x03BC;m pitch CuSn microbump process for high-end 3D applications

Color-Selective CMOS Photodiodes Based on Junction Structures and Process Recipes

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Product

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High density 20μm pitch CuSn microbump process for high-end 3D applications