High-Performance Graphene/β-Ga<sub>2</sub>O<sub>3</sub> Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication

Lin, Rijia; Zheng, Wei; Zhang, Dan; Zhang, Zhaojun; Liao, Qixian; Yang, Lu; Huang, Feng

doi:10.1021/acsami.8b05336

Cited by 168 publications

(127 citation statements)

References 43 publications

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“…Besides the relatively high on/off ratio and R , the PdSe 2 /pyramid Si photodetector also exhibits a broadband sensitivity to illumination with wavelengths ranging from 300 to 1650 nm, which is beyond that of Si‐based devices. In order to facilitate the study of spectral photoresponse in different wavelengths, another important metric, specific detectivity ( D *) which is often used to evaluate the ability of detecting weak optical signal from noise was calculated by using the noise equivalent power from the following equations

D^{*} = \frac{{(A normalΔ f)}^{1 / 2}}{NEP}

NEP = \frac{{\overset{true¯}{i_{n}^{normal2}}}^{1 / 2}}{R}

where A , Δ f , and

{\overset{true¯}{i_{normaln}^{2}}}^{1 / 2}

are the effective area of the proposed device (0.02 cm 2 ), bandwidth, and root‐mean‐square value of the noise current, respectively. As presented in Figure a, the

{\overset{true¯}{i_{normaln}^{2}}}^{1 / 2}

was obtained by directly recording the noise current of the device at different frequencies via a lock‐in preamplifier in dark .…”

Section: Resultsmentioning

confidence: 99%

Light Confinement Effect Induced Highly Sensitive, Self‐Driven Near‐Infrared Photodetector and Image Sensor Based on Multilayer PdSe₂/Pyramid Si Heterojunction

Liang

Zhao

Jiang

et al. 2019

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In this study, a highly sensitive and self‐driven near‐infrared (NIR) light photodetector based on PdSe2/pyramid Si heterojunction arrays, which are fabricated through simple selenization of predeposited Pd nanofilm on black Si, is demonstrated. The as‐fabricated hybrid device exhibits excellent photoresponse performance in terms of a large on/off ratio of 1.6 × 105, a responsivity of 456 mA W−1, and a high specific detectivity of up to 9.97 × 1013 Jones under 980 nm illumination at zero bias. Such a relatively high sensitivity can be ascribed to the light trapping effect of the pyramid microstructure, which is confirmed by numerical modeling based on finite‐difference time domain. On the other hand, thanks to the broad optical absorption properties of PdSe2, the as‐fabricated device also exhibits obvious sensitivity to other NIR illuminations with wavelengths of 1300, 1550, and 1650 nm, which is beyond the photoresponse range of Si‐based devices. It is also found that the PdSe2/pyramid Si heterojunction device can also function as an NIR light sensor, which can readily record both “tree” and “house” images produced by 980 and 1300 nm illumination, respectively.

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D^{*} = \frac{{(A normalΔ f)}^{1 / 2}}{NEP}

NEP = \frac{{\overset{true¯}{i_{n}^{normal2}}}^{1 / 2}}{R}

where A , Δ f , and

{\overset{true¯}{i_{normaln}^{2}}}^{1 / 2}

are the effective area of the proposed device (0.02 cm 2 ), bandwidth, and root‐mean‐square value of the noise current, respectively. As presented in Figure a, the

{\overset{true¯}{i_{normaln}^{2}}}^{1 / 2}

was obtained by directly recording the noise current of the device at different frequencies via a lock‐in preamplifier in dark .…”

Section: Resultsmentioning

confidence: 99%

Light Confinement Effect Induced Highly Sensitive, Self‐Driven Near‐Infrared Photodetector and Image Sensor Based on Multilayer PdSe₂/Pyramid Si Heterojunction

Liang

Zhao

Jiang

et al. 2019

Small

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“…This part mainly focuses on those heterojunctions/heterostructures apart from lattice matching and vdWs integration, most of which are semiconductor–semiconductor junctions108,114,115,151 and semiconductor–conductive materials junctions 19,20,152. The basic function of a heterojunction is to create built‐in electrical fields near the interfaces and effectively separate photogenerated carriers 114,115,153.…”

Section: Heterojunction Integration For Uv Pdsmentioning

confidence: 99%

“…Combining wide‐bandgap semiconductors and graphene, which possesses high carrier mobility and high transparency, is very useful for deep ultraviolet detection. The rectifying effect between graphene and semiconductors such as GaN and Ga 2 O 3 leads to promoted responsivity and sensitivity of solar blind ultraviolet detectors 19,20. These materials have brought diverse choices of light absorption part of a heterojunction/heterostructure, and provided more methods for enhanced photodetection performance.…”

Section: Introductionmentioning

confidence: 99%

Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications

Chen

Ouyang

Yang

et al. 2020

Adv Funct Materials

279

192

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Ultraviolet photodetectors (UV PDs) with "5S" (high sensitivity, high signal-tonoise ratio, excellent spectrum selectivity, fast speed, and great stability) have been proposed as promising optoelectronics in recent years. To realize highperformance UV PDs, heterojunctions are created to form a built-in electrical field for suppressing recombination of photogenerated carriers and promoting collection efficiency. In this progress report, the fundamental components of heterojunctions including UV response semiconductors and other materials functionalized with unique effects are discussed. Then, strategies of building PDs with lattice-matched heterojunctions, van der Waals heterostructures, and other heterojunctions are summarized. Finally, several applications based on heterojunction/heterostructure UV PDs are discussed, compromising flexible photodetectors, logic gates, and image sensors. This work draws an outline of diverse materials as well as basic assembly methods applied in heterojunction/heterostructure UV PDs, which will help to bring about new possibilities and call for more efforts to unleash the potential of heterojunctions.

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“…The responsivity at 254 nm reached up to 3.05 A W −1 without consuming external power. Lin et al used graphene as the transparent conductive layer to form graphene/β‐Ga 2 O 3 /GaN heterojunction. With the help of large‐area transparent electrode, a typical “sandwich” structure UV photodetector with low dark current density (1.25 × 10 −8 A cm −2 ) and high sensitivity (12.8 A W −1 ) was successfully assembled.…”

Section: Introductionmentioning

confidence: 99%

Broadband Ultraviolet Photodetector Based on Vertical Ga₂O₃/GaN Nanowire Array with High Responsivity

Zhang

Ding

et al. 2019

Advanced Optical Materials

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attracted significant attention, which has a vast and growing number of military and civilian applications such as fire detection, missile interception, ozone hole monitoring, bioaerosol detection, astronomical imaging, and so on. [1][2][3] As the continuous improvement of devices integration, environment complexity, and interference technology, BUV photodetectors can effectively reduce false alarm rates in early warning, searching, and tracking systems, to improve the accuracy and versatility of detection systems in various situations. Many heterojunction structures based on wide-band-gap semiconductors have been reported to achieve the BUV photodetectors such as AlGaN/GaN, MgZnO/ZnO, and Ga 2 O 3 /GaN heterojunction. [4][5][6][7][8][9][10] However, AlGaN/GaN heterojunction has a high conduction band discontinuity which impedes the flow of photogenerated electrons and reduces the performance of photodetectors. [11] And high Mg-content MgZnO with high crystal quality is difficult to achieve by epitaxial growth due to the phase segregation in single wurtzite phase MgZnO. [12] β-Ga 2 O 3 with an ultrawide bandage of 4.9 eV is considered as a promising candidate for UV detection. [13,14] It has great thermal and chemical stability, determining its possibility of working at high temperatures and strong radiations. Moreover, there is a small lattice mismatch and a low conduction band offset at the interface between Ga 2 O 3 and GaN. These characteristics mean that Ga 2 O 3 /GaN heterojunction could be a potential for BUV photodetectors. Kalra et al. [6] demonstrated epitaxial β-Ga 2 O 3 /GaN-based vertical metal-heterojunctionmetal multiband UV photodetectors with the responsivity (R) of 3.7 A W −1 at 256 and 365 nm. For saving energy and broadening the application prospects of UV photodetectors, Guo et al. [15] fabricated a super-high-performance self-powered UV photodetector based on the GaN/Sn:Ga 2 O 3 p-n junction generated by depositing a Sn-doped n-type Ga 2 O 3 thin film onto a p-type GaN thick film. The responsivity at 254 nm reached up to 3.05 A W −1 without consuming external power. Lin et al. [16] used graphene as the transparent conductive layer to form graphene/β-Ga 2 O 3 /GaN heterojunction. With the help of largearea transparent electrode, a typical "sandwich" structure UV photodetector with low dark current density (1.25 × 10 −8 A cm −2 ) and high sensitivity (12.8 A W −1 ) was successfully assembled. Broadband ultraviolet (BUV) photodetectors responding to the multiband spectrum can effectively reduce false alarm rates and improve the accuracy and versatility of detection systems in various situations. A high-responsivityBUV photodetector based on vertical Ga 2 O 3 /GaN nanowire array is proposed and demonstrated. Ga 2 O 3 /GaN nanowires are obtained by partially thermally oxidizing GaN nanowires grown by molecular beam epitaxy and used to combine with a monolayer graphene film to form graphene/Ga 2 O 3 /GaN heterojunction. Moreover, the oxidation mechanism of GaN nanowires is further investigated by ...

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High-Performance Graphene/β-Ga₂O₃ Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication

Cited by 168 publications

References 43 publications

Light Confinement Effect Induced Highly Sensitive, Self‐Driven Near‐Infrared Photodetector and Image Sensor Based on Multilayer PdSe₂/Pyramid Si Heterojunction

Light Confinement Effect Induced Highly Sensitive, Self‐Driven Near‐Infrared Photodetector and Image Sensor Based on Multilayer PdSe₂/Pyramid Si Heterojunction

Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications

Broadband Ultraviolet Photodetector Based on Vertical Ga₂O₃/GaN Nanowire Array with High Responsivity

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High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication

Cited by 168 publications

References 43 publications

Light Confinement Effect Induced Highly Sensitive, Self‐Driven Near‐Infrared Photodetector and Image Sensor Based on Multilayer PdSe2/Pyramid Si Heterojunction

Light Confinement Effect Induced Highly Sensitive, Self‐Driven Near‐Infrared Photodetector and Image Sensor Based on Multilayer PdSe2/Pyramid Si Heterojunction

Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications

Broadband Ultraviolet Photodetector Based on Vertical Ga2O3/GaN Nanowire Array with High Responsivity

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High-Performance Graphene/β-Ga₂O₃ Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication

Light Confinement Effect Induced Highly Sensitive, Self‐Driven Near‐Infrared Photodetector and Image Sensor Based on Multilayer PdSe₂/Pyramid Si Heterojunction

Light Confinement Effect Induced Highly Sensitive, Self‐Driven Near‐Infrared Photodetector and Image Sensor Based on Multilayer PdSe₂/Pyramid Si Heterojunction

Broadband Ultraviolet Photodetector Based on Vertical Ga₂O₃/GaN Nanowire Array with High Responsivity