High‐performance GaN/InGaN heterojunction bipolar transistors using a direct‐growth approach

Abstract

We report high performance npn GaN/InGaN double heterojunction bipolar transistors (DHBTs) that was directly grown on sapphire substrates with high common‐emitter current gain (>40) at collector current density (JC) > 5 kA/cm2. A study on the emitter sizing effect shows that the perimeter‐dependent recombination current density changes from 1.5×10‐6 to 6.1×10‐4 A/cm as JC increases from 5 A/cm2 to 100 A/cm2. The fabricated multi‐fingered DHBTs show similar surface recombination current density and a current gain of > 23 at JC > 100 A/cm2 is also achieved (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Synthesis and characterization of GaN/ZnS core–shell nanowires

“…It is well-known that heterojunction is a primary block of semiconducting devices. Nowadays, there have been some works about GaN nanowires heterojunctions, including n-ZnO nanowires/p-GaN heterostructure [9], GaN/GaP heterojunctions [10], AlGaN/GaN heterojunctions [11], GaN/InGaN heterojunction [12], heterostructured Mn 3 GaN 0.5 /GaN nanowires [13] and wurtzite/zinc-blende heterostructure GaN nanorods [14]. These heterojunctions are of great importance for both fundamental research and technology application.…”