Optimization of GaN/InGaN Heterojunction Phototransistor

Zhu, Min; Chen, Jun; Xu, Jinping; Li, Xiangyang

doi:10.1109/lpt.2017.2647828

Cited by 8 publications

(4 citation statements)

References 14 publications

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“…When the V CE reaches a certain (device-specific) value, the base-collector depletion region boundary meets the base-emitter depletion region boundary. In this state, the HBPT effectively has no base and thus loses all gain [26,39]. This behavior confirms the aforementioned tunneling effect, which is easily observed at a thinner base width.…”

Section: Resultssupporting

confidence: 82%

“…Compared with HBPTs with a 100 nm base width, the HBPTs with a 120 nm base width exhibited a slowly increasing optical gain with V CE , attributed to HBPTs with a wider base width (120 nm) that retained a higher base recombination loss. At V CE =4 V, HBPTs with 80 and 100 nm base widths have an optical gain of approximately 7.4×10 4 and 8×10 4 , respectively, which are higher than those of GaN/AlGaN HBPTs [28,39]. The spectral response for HBPTs with various base widths biased at V CE =4 V is shown in figure 4.…”

Section: Resultsmentioning

confidence: 99%

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Base-width modulation effects on the optoelectronic characteristics of n-ITO/p-NiO/n-ZnO heterojunction bipolar phototransistors

Hwang¹,

Hwang²,

Chen³

2021

Nanotechnology

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ITO/NiO/ZnO npn heterojunction bipolar phototransistors (HBPTs) with various base widths are fabricated using a radio-frequency sputtering system. The effects of base-width modulation on the optoelectronic characteristics of the prepared HBPTs are studied. The dark current of HBPTs decreases with increasing base width because the injected electrons from the emitter are recombined in the wide base region. The photocurrent increases with decreasing base width, which is attributed to higher emitter-base injection efficiency. The responsivity increases with the collector-emitter voltage (V CE) in the HBPTs with a 100 nm base width, whereas the responsivity sharply decreases at V CE > 4 V for the HBPTs with a thinner base width (80 nm) due to the punch-through effect. In contrast, the responsivity approaches saturation at large V CE for HBPTs with a thicker base width (120 nm). The responsivity and detectivity decrease with increasing incident light intensity, which is caused by an increase in the base recombination loss. The HBPTs with a base width of 100 nm exhibits the largest responsivity and detectivity; their detectivity is higher than that of HBPTs with base widths of 80 and 120 nm by approximately two and three orders, respectively.

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Section: Resultssupporting

confidence: 82%

Section: Resultsmentioning

confidence: 99%

Base-width modulation effects on the optoelectronic characteristics of n-ITO/p-NiO/n-ZnO heterojunction bipolar phototransistors

Hwang¹,

Hwang²,

Chen³

2021

Nanotechnology

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“…[13][14][15][16] Thereafter, researchers have reported considerable optimizations in the doping or structure of GaN-based BPTs. 11,[17][18][19] Additionally, some investigations have shown that GaN-based BPTs can operate in an avalanche mode. [20][21][22] Although GaN-based HPTs can realize high gain, it is worth emphasizing that both photocurrent and optical gains remain relatively low when external bias falls below the knee voltage.…”

Section: Introductionmentioning

confidence: 99%

Realizing high zero-bias gain in a GaN-based bipolar phototransistor through thin-base configuration for ultraviolet imaging

Wang,

Jiang,

Zhang

et al. 2024

J. Mater. Chem. C

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“…The alternate current (AC) impedance of the LED receiver can be controlled by the injected light [14]. InGaN-based or InGaAsP-based phototransistors have also been studied [15], [16]. The former is advantageous in low dark current and high responsivity of the white-LED based VLC receivers.…”

Section: Introductionmentioning

confidence: 99%

Phototransistor-like Light Controllable IoT Sensor based on Series-connected RGB LEDs

Li,

Liang,

2018

Preprint

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An IoT optical sensor based on the series-connected RGB LEDs is designed, which exhibits the light-controllable optical-to-electrical response like a phototransistor. The IoT sensor has the maximal AC and DC responsivities to the violet light mixed by blue and red light. Its responsivity to the blue light is programmable by the impinging red or green light. A theoretical model based on the light-dependent impedance is developed to interpret its novel optoelectronic response. Such IoT sensor can simultaneously serve as the transmitter and the receiver in the IoT optical communication network, thus significantly reduces the system complexity.

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Optimization of GaN/InGaN Heterojunction Phototransistor

Cited by 8 publications

References 14 publications

Base-width modulation effects on the optoelectronic characteristics of n-ITO/p-NiO/n-ZnO heterojunction bipolar phototransistors

Base-width modulation effects on the optoelectronic characteristics of n-ITO/p-NiO/n-ZnO heterojunction bipolar phototransistors

Realizing high zero-bias gain in a GaN-based bipolar phototransistor through thin-base configuration for ultraviolet imaging

Phototransistor-like Light Controllable IoT Sensor based on Series-connected RGB LEDs

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