GaN-Based Double-Heterojunction Bipolar Transistors With a Composition Graded p-InGaN Base

Yan, Shumeng; Zhou, Yu; Liu, Jianxun; Zhong, Yaozong; Sun, Xiaofeng; Chen, Xin; Guo, Xiaolu; Li, Qian; Sun, Qian; Yang, Hui

doi:10.1109/ted.2023.3243585

Cited by 3 publications

(7 citation statements)

References 31 publications

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“…On the other hand, GaN heterojunction bipolar transistors (HBTs) have also been proposed as power switching devices [5][6][7][8], which are also vertical structures, with the advantages of low photolithography accuracy, normally-off operations, high current density, strong avalanche breakdown ability and lower RON,sp due to conductivity modulation effect. Up to date, some promising results have been reported of GaN HBTs, such as high electric field near to 3 MV/cm [7][8][9] and high current density (141 kA/cm 2 on GaN-on-GaN HBT [10]).…”

Section: This Paper Demonstratesmentioning

confidence: 99%

AlGaN/GaN heterojunction bipolar transistors with low dynamic RON,sp and Vth hysteresis

Wang

Zhang

Cheng

et al. 2023

Preprint

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This paper demonstrates the dynamic characteristics of 150-V-class GaN power HBTs for the first time. At OFF-state collector bias V = 80 V, the device shows a low dynamic specific on-resistance (R) of 0.316 mΩ·cm, which is only 4.7% higher than static R, thanks to current conductive path far from the surface. A threshold voltage (V) of 3.58 V extracted at 1 A/cm is achieved with an on/off current ratio of 2×10. The device also show a large base voltage swing of -7 to 7 V with a small V hysteresis of 50 mV. The low dynamic resistance degradation, high positive V with low V hysteresis, and large base voltage swing all demonstrate the great potential of GaN HBT in power switching applications.

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Section: This Paper Demonstratesmentioning

confidence: 99%

AlGaN/GaN heterojunction bipolar transistors with low dynamic RON,sp and Vth hysteresis

Wang

Zhang

Cheng

et al. 2023

Preprint

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“…The Al mole fraction in AlGaN emitters typically ranges from 5% to 20% as reported in AlGaN/GaN HBTs [7][8][9]23,24]. However, it is widely recognized that the crystal mass quality in Al x GaN deteriorates as the Al mole fraction increases, as deep-level increments and deep donor formations become conspicuous [25].…”

Section: Impact Of Al Mole Fraction Of Emitter On the Forward Perform...mentioning

confidence: 99%

“…Bipolar transistors have been widely used in the SiC material system (SiC BJT), while the development of GaN bipolar transistors has lagged behind due to the material constraints of the basic difficulties. However, up to now, several encouraging findings have been documented regarding GaN HBTs, including the observation of a high electric field near 3 MV/cm [7][8][9] and a high current density of 141 kA/cm 2 on GaN-on-GaN HBT [10].…”

Section: Introductionmentioning

confidence: 99%

“…Despite the potential demonstrated by AlGaN/GaN HBTs as power devices, the fabrication process for GaN-based HBTs with high current gain (β) and high power encounters various challenges, including epitaxial growth of high quality, thicker collectors, and epitaxial growth of p-type substrates with high carrier lifetimes and high hole concentrations for n-p-n HBTs [9]. The PND of GaN-on-Si at 1 kV level and the PND of GaN-on-GaN at 6 kV have been gradually reported [11,12] as the epitaxial technology of GaN materials has improved.…”

Section: Introductionmentioning

confidence: 99%

“…Ref. [9] describes the electrical characteristics of GaN/InGaN HBTs with composition-graded p-InGaN base; however, it does not delve into a comprehensive investigation of the impact of epitaxial layer design on the gain, output, and breakdown characteristics of GaN HBTs.…”

Section: Introductionmentioning

confidence: 99%

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Simulation and Comprehensive Analysis of AlGaN/GaN HBT for High Voltage and High Current

Wang,

Zhang,

et al. 2023

Electronics

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We present a series of TCAD analysis of gallium nitride (GaN) heterojunction bipolar transistors (HBTs) that investigates the impact of various key parameters on the gain characteristics, output characteristics, and breakdown characteristics. It has been observed that the DC gain of the AlGaN/GaN HBTs exhibits a non-linear relationship with the increase in the Al fraction. Specifically, the DC gain initially rises, then declines after reaching its peak value at approximately 7%. By optimizing the concentration of the base and the concentration and thickness of the collector epitaxial layer, it is possible to achieve devices with breakdown voltages of 1270 V (with a collector thickness of 6 μm and a carrier concentration of 2 × 1016 cm−3), specific on-resistance of 0.88 mΩ·cm2, and a current gain of 73. In addition, an investigation on breakdown characteristics is conducted for HBTs with two types of substrates, namely QV-HBTs and FV-HBTs, at different inclinations of the ramp. We propose that critical angles are 79° and 69° to prevent the surface breakdown of the device, which helps to achieve an avalanche in GaN HBTs. We anticipate that the aforementioned findings will offer valuable insights for designing GaN-based power HBTs with elevated breakdown thresholds, heightened current densities, and increased power capabilities.

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A Novel AlGaN/GaN Lateral Bipolar Junction Transistor Exploiting Polarization Effects

Ren,

Shi,

Zou

et al. 2024

IEEE Trans. Electron Devices

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GaN-Based Double-Heterojunction Bipolar Transistors With a Composition Graded p-InGaN Base

Cited by 3 publications

References 31 publications

AlGaN/GaN heterojunction bipolar transistors with low dynamic RON,sp and Vth hysteresis

AlGaN/GaN heterojunction bipolar transistors with low dynamic RON,sp and Vth hysteresis

Simulation and Comprehensive Analysis of AlGaN/GaN HBT for High Voltage and High Current

A Novel AlGaN/GaN Lateral Bipolar Junction Transistor Exploiting Polarization Effects

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