Simulation and Comprehensive Analysis of AlGaN/GaN HBT for High Voltage and High Current
Xinyuan Wang,
Lian Zhang,
Jiaheng He
et al.
Abstract:We present a series of TCAD analysis of gallium nitride (GaN) heterojunction bipolar transistors (HBTs) that investigates the impact of various key parameters on the gain characteristics, output characteristics, and breakdown characteristics. It has been observed that the DC gain of the AlGaN/GaN HBTs exhibits a non-linear relationship with the increase in the Al fraction. Specifically, the DC gain initially rises, then declines after reaching its peak value at approximately 7%. By optimizing the concentration… Show more
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