High performance gallium-zinc oxynitride thin film transistors for next-generation display applications

Kim, Tae Sang; Kim, Hyunsuk; Park, Joon Seok; Son, Kyoung Seok; Kim, Eok Su; Seon, Jong‐Baek; Lee, Sunhee; Seo, Seok-Jun; Kim, Sun–Jae; Jun, Sungwoo; Lee, Kyung Min; Shin, Dongjae; Lee, Jae‐Wook; Jo, Chunhyung; Choi, Sung-Jin; Kim, Dong Myong; Kim, Dae Hwan; Ryu, Meguya; Cho, Seong Ho; Park, Young-Soo

doi:10.1109/iedm.2013.6724701

Cited by 24 publications

(22 citation statements)

References 3 publications

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“…The I ON showed an inversely proportional relation with gate length in a wide gate length TFT, a typical method to extract mobility correctly for Si MOSFET and metal-gate/high-κ MOSFET 29 30 31 . A remarkably high μ FE of 147 cm 2 /Vs is obtained with the mean value and standard deviation of 141.6 ± 11.5 cm 2 /Vs, which is higher than that of ZnO-based TFTs 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 and even higher than that of a CVD-grown multilayered MoS 2 MOSFET 21 22 23 24 . To reach high mobility, epitaxial growth of crystalline MoS 2 on a crystal substrate is needed.…”

Section: Resultsmentioning

confidence: 80%

“…The metal-oxide thin-film transistor (TFT) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 is a revolutionary technology for displays due to its high mobility and simple process. The high mobility of zinc-oxide (ZnO)-based materials was attributed to the spatially spread metal ns orbitals with isotropic shape, which is possible to overlap the neighboring metal ns orbitals 7 .…”

mentioning

confidence: 99%

“…The high mobility of zinc-oxide (ZnO)-based materials was attributed to the spatially spread metal ns orbitals with isotropic shape, which is possible to overlap the neighboring metal ns orbitals 7 . However, the high performance ZnO-based TFTs of InGaZnO 7 , bi-layer InSnO/InGaZnO 11 , InZnO 13 , and GaZnON 18 compounds usually contain Indium (In) or Gallium (Ga), which are rare elements in earth’s crust. In addition, device performance is sensitive to the moisture degradation and atomic composition of these compound.…”

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confidence: 99%

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Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

Shih

Chin

et al. 2016

Sci Rep

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High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.

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Section: Resultsmentioning

confidence: 80%

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confidence: 99%

mentioning

confidence: 99%

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Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

Shih

Chin

et al. 2016

Sci Rep

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“…Peaks D and E indicate the formation of Zn-N bonds. The increase in intensity of peak E with annealing time reflects the stabilization of Zn-N bonding properties in the stoichiometric Zn 3 N 2 phase, while the decrease in intensity of peak D indicates a reduction of the non-stoichiometric or defective Zn x N y phase, which may be correlated with an improvement in the SS value [13], [14].…”

Section: Methodsmentioning

confidence: 99%

Highly Stable ZnON Thin-Film Transistors With High Field-Effect Mobility Exceeding 50 <inline-formula> <tex-math notation="LaTeX">$\mathrm{cm}^{2}$ </tex-math></inline-formula>/Vs

Jeong

Kim

et al. 2015

IEEE Electron Device Lett.

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High-performance thin-film transistors (TFTs) based on ZnON channels were fabricated using a dc reactive sputtering method. To improve the photoinduced bias stability, a postannealing process was carried out at a low ambient pressure (∼100 mTorr, air ambient) at 250°C for various annealing times (1-5 h). The transfer characteristics of the postannealed ZnON TFTs exhibited an improved subthreshold swing ranging from 0.60 to 0.42 V/decade. Other transport properties remained similar including a high mobility (µ sat ) of >50 cm 2 /Vs, a threshold voltage (V th ) of −2.5 V, and an ON-OFF drain current ratio of >10 8 . In addition, photoinduced bias reliability under a gate bias stress (V G = −20 V) was significantly improved from −10.88 V (1 h) to −2.28 V (5 h). These results can be explained by the enhancement of bonding properties between Zn metal and two different anions (O, N) as stable N-Zn-O states.

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“…These merits could satisfy the requirements of most high-resolution large-area displays [3], [4], and flexible electronics [5]- [7]. More recently, attention was also put on the application of back-end-of-line (BEOL) active device technology integrated on advanced large-scale-integration (LSI) chips [8]- [11].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Film Profile Engineered ZnO TFTs With Discrete Gates

Lyu

Lin

Huang

2015

IEEE J. Electron Devices Soc.

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By virtue of the film-profile engineering scheme and properly designed device structure, ZnO TFTs with discrete bottom gates and sub-micron channels were fabricated and characterized. In the fabrication, a suspended bridge constructed over the bottom gate is used to tailor the profile of subsequently deposited films. Superior electrical characteristics in terms of ultrahigh ON/OFF current ratio (∼10 10 ), steep sub-threshold swing (66∼108 mV/dec), and very low off-state leakage current are demonstrated with the fabricated devices. Effects of channel lengths on the device characteristics are also explored. Because of more effective shadowing of the depositing species with a longer suspended bridge, the deposited films become thinner at the central channel. As a result, the device shows more positive turn-on voltage and better subthreshold swing with increasing channel length.INDEX TERMS Metal oxide, film profile engineering (FPE), ZnO, thin-film transistor.

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High performance gallium-zinc oxynitride thin film transistors for next-generation display applications

Cited by 24 publications

References 3 publications

Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

Highly Stable ZnON Thin-Film Transistors With High Field-Effect Mobility Exceeding 50 <inline-formula> <tex-math notation="LaTeX">$\mathrm{cm}^{2}$ </tex-math></inline-formula>/Vs

Fabrication and Characterization of Film Profile Engineered ZnO TFTs With Discrete Gates

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