High-Performance Enhancement-Mode <i>p</i>-Channel GaN MISFETs With Steep Subthreshold Swing

Yin, Yidi; Lee, Kean Boon

doi:10.1109/led.2022.3152308

Cited by 23 publications

(11 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To achieve the required crystal quality, typically a buffer layer consisting of several µm of GaN has to be grown first. To facilitate the 2DHG formation, an Al(In)GaN backbarrier is grown followed by the GaN channel [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] as sketched in figure 1(c) creating a double heterostructure (DH). However, even with a thick GaN buffer layer, it is often found that additional p-type doping either in the channel or in a supply layer above the channel is needed to compensate for the unintentional n-conductivity [2,[10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases

Beckmann¹,

Wieben²,

Zweipfennig³

et al. 2022

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

GaN/AlxGa1-xN heterostructures were grown by metal-organic vapor phase epitaxy (MOVPE) to study in detail the formation of two-dimensional hole gases (2DHG). In contrast to the common double-heterostructure approach to create 2DHG, which is based on GaN buffer layers and leads to the parallel formation of a two-dimensional electron gas (2DEG), this concept is designed to create a 2DHG only. The Al mole fraction in the AlGaN buffer and the GaN channel thickness are each varied to investigate their influence on 2DHG properties. The carrier concentrations as determined by room temperature Hall measurements follow the expected trend given by the Al content dependence of the spontaneous polarization of the relaxed AlGaN buffer. A 2DHG density as high as of 1.6·1013 cm-2 with a negligible dependence on temperature (80 – 300 K) is determined for a GaN/Al0.29Ga0.71N heterostructure by temperature-dependent Hall measurements. Higher carrier concentrations can also be achieved, yet strain relaxation of the GaN channel degrades the transport properties for Al contents above 30 %.

show abstract

Section: Introductionmentioning

confidence: 99%

MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases

Beckmann¹,

Wieben²,

Zweipfennig³

et al. 2022

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…The SS can be defined as the required V G to change the I DS by one order of magnitude , SS = ∂ V normalG / ∂ log 10 nobreak0em.25em⁡ I DS The I DS – V G curves for the MOSFET without and with connecting a ferroelectric capacitor were characterized during V G sweeping from −1.0 to 6.0 V and then returning to −1.0 V (see Supporting Information Figure S2a for the waveform). The mean sweeping speed of V G is ∼0.5 V/s and the step of V G sweeping is set to 0.5 mV, which is similar to previous works. ,,− …”

Section: Resultsmentioning

confidence: 99%

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf_0.5Zr_0.5O₂ Thin Films

Wang,

Liu,

Luo

et al. 2023

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

The emergence of complementary metal−oxide semiconductor (CMOS)-compatible HfO 2 -based ferroelectric materials provides a promising way to achieve ferroelectric field-effect transistors (FeFETs) with a steep subthreshold swing (SS) reduced to below the Boltzmann thermodynamics limit (∼60 mV/dec at room temperature), which has important implications for lowering power consumption. In this work, a metal−oxide-semiconductor field-effect transistor (MOSFET) is connected with Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric capacitors with different capacitances. By adjusting the capacitance of ferroelectric capacitors, an ultralow SS of ∼0.34 mV/dec in HfO 2 -based FeFETs can be achieved. More interestingly, by designing the sweeping voltage sequences, the SS can be adjusted to be 0 mV/dec with the drain current ranging over six orders of magnitude, and the threshold voltage for turning on the MOSFET can be further reduced. The manipulated SS could be attributed to the evolution of ferroelectric switching. Our work contributes to understanding the origin of ultralow SS in ferroelectric MOSFETs and the realization of low-power devices.

show abstract

“…The high temperature process steps of ohmic contact formation for n-HEMT (∼850 • C) and p-MOSFET (∼550 • C) are respectively designed prior to the Fluorine plasma ion implantation, which facilitates to obtain good stability of F-ion in p-MOSFET [21]. Besides, considering the possible lattice damage induced by gate recess of p-MOSFET, the wet treatment by using TMAH [22] or HCl [23] can be used to improve the recessed surface quality.…”

Section: Charge Storage Layer Simulationmentioning

confidence: 99%

A novel E-mode GaN p-MOSFET featuring charge storage layer with high current density

Chen

Ruan

et al. 2022

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

In this work, a trench gate enhancement-mode (E-mode) GaN p-type Metal Oxide Semiconductor Field Effect Transistor featuring charge storage layer is proposed, which exhibits an effectively improved current density. Compared with conventional devices without charge storage layer, the current density can be increased by 154% (@VDS=-5V, VGS=-7V). Besides, the simulation has been conducted to obtain the optimized AlGaN barrier thickness t, Al mole-fraction x, trench gate depth Trecess, and negative charge concentration NCSL. In this case, the p-MOSFETs show an on-current |ION, max| of 14 mA/mm, VTH of -0.47 V, ION/IOFF of >108, and on-resistance RON of 0.27 kΩ.mm. The proposed GaN p-MOSFETs exhibit a promising method to improve the current drive capability of GaN p-channel devices.

show abstract

High-Performance Enhancement-Mode p-Channel GaN MISFETs With Steep Subthreshold Swing

Cited by 23 publications

References 27 publications

MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases

MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf_0.5Zr_0.5O₂ Thin Films

A novel E-mode GaN p-MOSFET featuring charge storage layer with high current density

Contact Info

Product

Resources

About

High-Performance Enhancement-Mode p-Channel GaN MISFETs With Steep Subthreshold Swing

Cited by 23 publications

References 27 publications

MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases

MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf0.5Zr0.5O2 Thin Films

A novel E-mode GaN p-MOSFET featuring charge storage layer with high current density

Contact Info

Product

Resources

About

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf_0.5Zr_0.5O₂ Thin Films