High-performance energy-storage ferroelectric multilayer ceramic capacitors via nano-micro engineering

Abstract

The theory of obtaining high energy-storage density and efficiency for ceramic capacitors is well known, e.g. increasing breakdown electric field and decreasing remanent polarization of dielectric materials. How to achieve...

Utilizing Linear Polymers to Optimize Remanent Polarization and Construct Multilayer Interfaces to Obtain High-Efficient Poly(vinylidene fluoride)-Based Energy-Storage Composites

“…36 According to formulas 2 and 3, reducing D r and increasing E b are key strategies for improving energy storage performance. 37 From the above results, it can be found that the introduction of PC layers and the design of multilayer structures optimize the D r of PVDF. In addition, this study has established that as the number of PC layers increases, the applied electric field of the multilayer films gradually increases.…”

Significantly improved energy storage performances of K0.5Na0.5NbO3 lead-free ceramics via a composition optimization strategy

“…3(e) and (f). 3,4,6,10,11,17–40 Although extensive dielectric materials with high W r or large η have been developed, it is still a challenging task to simultaneously attain dielectric materials possessing W r above 6 J cm −3 and η greater than 85%. In this work, an ultrahigh W r (6.14 J cm −3 ) accompanied by a superior η (87%) is realized in the 0.85KNN–0.15BMT ceramic, which represents a significant breakthrough in dielectric ceramics.…”

AgNbO3-Based Multilayer Capacitors: Heterovalent-Ion-Substitution Engineering Achieves High Energy Storage Performances

“…This is because Sm 0.03 AN+Mn MLCCs possess a large P max , low P r , and ultrahigh BDS simultaneously, as the heterovalent ion substitution method was adopted to stabilize the AFE phase to room temperature. In addition, MLCC technology also plays an important role in enhancing BDS. − Figure f shows the η of the Sm x AN+Mn MLCCs. The η value sharply decreases when the electric field increases from 100 to 400 kV·cm –1 , which is due to the AFE-FE phase occurrence.…”