Antiferroelectric (AFE) thick (1 μm) films of Pb(1-3x/2)LaxZr0.85Ti0.15O3 (PLZT) with x = 0.08, 0.10, 0.12, and 0.14 were deposited on LaNiO3/Si (100) substrates by a sol-gel method. The dielectric properties, energy-storage performance, electrocaloric effect, and leakage current behavior were investigated in detail. With increasing La content, dielectric constant and saturated polarizations of the thick films were gradually decreased. A maximum recoverable energy-storage density of 38 J/cm(3) and efficiency of 71% were achieved in the thick films with x = 0.12 at room temperature. A large reversible adiabatic temperature change of ΔT = 25.0 °C was presented in the thick films with x = 0.08 at 127 °C at 990 kV/cm. Moreover, all the samples had a lower leakage current density below 10(-6) A/cm(2) at room temperature. These results indicated that the PLZT AFE thick films could be a potential candidate for applications in high energy-storage density capacitors and cooling devices.

Enhanced ΔT and widened Tspan simultaneously utilizing a relaxor multiphase boundary in KNN-based ceramics.

A maximum ΔT of 53.8 °C at 5 °C was achieved at 900 kV cm−1 for a PLZST AFE thick film.

The compositionally graded multilayer Pb(1-3x/2)La x Zr 0.85 Ti 0.15 O 3 (PLZT) antiferroelectric (AFE) thick films were deposited on LaNiO 3 /Si (100) substrates by using a sol-gel method. The effect of gradient sequence on dielectric properties, energy-storage performance, and electrocaloric effect (ECE) were investigated in detail. It is found that the compositionally graded films exhibited the significant enhancement in dielectric properties, energy-storage performance and ECE, which was, in contrast to the single-composition PLZT film, contributed by the strain and the gradient of polarization near the interfaces between the adjacent layers. Therecoverable energy-storage density of 44 J/cm 3 and efficiency of 71% were obtained in the upgraded PLZT AFE thick film at 1950 kV/cm. A giant reversible adiabatic temperature change of ∆T = 28 o C at room temperature at 900 kV/cm were also achieved in the upgraded film. Moreover, all the thick films displayed a small leakage current density below 10-6 A/cm 2 at room temperature. Thus, the compositionally graded PLZT AFE thick films with a large recoverable energy-storage density and a giant ECE are potential candidate for the applications in high energy-storage density capacitors and cooling devices.

Featured with high polarization and large electric field‐induced phase transition, PbZrO3‐based antiferroelectric (AFE) materials are regarded as prospective candidates for energy‐storage applications. However, systematical studies on PbZrO3‐based materials are insufficient because of their complex chemical compositions and various phase structures. In this work, (Pb0.94La0.04)(Zr1‐x‐ySnxTiy)O3 (abbreviated as PLZST, 0 ≤ x ≤ 0.5, 0.01 ≤ y ≤ 0.1) AFE system was selected and the energy‐storage behavior was regulated. It is found that low Ti content benefits to obtain satisfactory electric breakdown strength, realizing high energy‐storage density. With Sn content increasing, the electric hysteresis decreases gradually, which is beneficial to improve energy conversion efficiency. As a result, a large recoverable energy‐storage density of 9.6 J/cm3 and a high energy conversion efficiency of 90.2% were achieved in (Pb0.94La0.04)(Zr0.49Sn0.5Ti0.01)O3 ceramic. This work reveals energy‐storage behavior of PLZST AFE materials systematically, providing reference for performance tailoring and new material designing in energy‐storage applications.