“…Recently, a great deal of research has been carried out to develop highperformance 4H-SiC UV photodiodes with varieties of device structures, such as Schottky [3,4], metal-semiconductor-metal [5,6], p-n junction [7], p-i-n junction [8], and avalanche photodiodes [9]. Among these structures, p-i-n photodiodes are of particular interest due to a lot of advantages: low and constant capacitance, low dark current, high speed response, and high photosensitivity.…”