High-Performance 4H–SiC-Based Metal–Insulator–Semiconductor Ultraviolet Photodetectors With $\hbox{SiO}_{2}$ and $\hbox{Al}_{2}\hbox{O}_{3}\hbox{/}\hbox{SiO}_{2}$ Films

Abstract

4H-SiC-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors with thermally grown SiO 2 and evaporated Al 2 O 3 /SiO 2 (A/S) films are fabricated and demonstrated as normally-off and normally-on mode devices, respectively. Ultralow dark currents of 3.25 × 10 −10 and 9.75 × 10 −9 A/cm 2 and high UV-to-visible rejection ratios of > 2 × 10 3 have been achieved at 10 V. The peak responsivities of these devices were separately 30 mA/W at 260 nm and 50 mA/W at 270 nm at 10 V. These results demonstrate that S/4H-SiC and A/S/4H-SiC MIS photodetectors are promising candidates to be applied in optoelectronic integrated circuits.

Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer

“…23 The band diagram of without and with UTHfO 2 devices prepared with different metal fingers are displayed in Fig. 5.…”

Unique and Tunable Photodetecting Performance for Two-Dimensional Layered MoSe2/WSe2 p–n Junction on the 4H-SiC Substrate

“…As a wide band gap 3D semiconductor, nowadays, the material quality and manufacturing process of silicon carbide (SiC) have been improved and developed greatly . Ultraviolet photodetectors based on SiC have been studied comprehensively and commercialized for detection applications of flame in mines, electric arcs, and weather forecast. , Noticeably, high stability, high detectivity, and ultralow leakage can be obtained in these SiC photodetectors . Theoretically, n-type-doped SiC with carrier concentration in the range of 10 15 to 10 19 cm –3 shows the optical absorption band from 1 to 3 eV .…”