High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al<sub>2</sub>O<sub>3</sub>

Kudara, Ken; Imanishi, Shoichiro; Hiraiwa, Atsushi; Komatsuzaki, Yuji; Yamaguchi, Yutaro; Kawamura, Y.; Shinjo, Shintaro; Kawarada, Hiroshi

doi:10.1109/ted.2021.3086457

Cited by 24 publications

(11 citation statements)

References 33 publications

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“…These values are comparable to GaN-based HEMTs [183][184][185]. The maximum drain current density (I D max ) of 1.35 A/mm [186], the blocking voltage of >2 kV for normally off operation devices [187], and the microwave output power (P out ) of 3.8 W/mm at 1 GHz [188] and 1.5 W/mm at 3.6 GHz [189] have been also reported. Improvement in sheet resistance and contact resistance can provide further improvement in output power [190].…”

Section: Diamond Fetssupporting

confidence: 52%

Diamond for Electronics: Materials, Processing and Devices

et al. 2021

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Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance, or carrier mobility. However, it is also the one with the greatest difficulties in carrying out the device technology as a result of its very high mechanical hardness and smaller size of substrates. As a result, diamond is still not considered a reference material for power electronic devices despite its superior Baliga’s figure of merit with respect to other WBG materials. This review paper will give a brief overview of some scientific and technological aspects related to the current state of the main diamond technology aspects. It will report the recent key issues related to crystal growth, characterization techniques, and, in particular, the importance of surface states aspects, fabrication processes, and device fabrication. Finally, the advantages and disadvantages of diamond devices with respect to other WBG materials are also discussed.

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Section: Diamond Fetssupporting

confidence: 52%

Diamond for Electronics: Materials, Processing and Devices

et al. 2021

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“… Diagrams of different diamond H-FET RF high-frequency devices: ( a ) MOSFET—3.8 W/mm at 1 GHz [ 16 ], ( b ) MOSFET with thick Al 2 O 3 layer—1.5 W/mm at 3.6 GHz [ 291 ], ( c ) MISFET—70 GHz cutoff frequency [ 15 ], and ( d ) MESFET—120 GHz maximum frequency [ 14 ]. …”

Section: Figurementioning

confidence: 99%

“… ( a ) Large signal performance for MOSFET showing highest output power 3.8 W/mm at 1 GHz [ 16 ], ( b ) Cutoff frequency vs. gate length for diamond FET devices (dotted lines indicating drift velocity) [ 16 ], ( c ) Large signal performance for MOSFET with thick Al 2 O 3 layer showing highest output power 1.5 W/mm at 3.6 GHz [ 291 ], and ( d ) Output power density vs. frequency for different diamond devices (“star symbol at 3.6 GHz”: highest reported output power from diamond FET over 2 GHz) [ 291 ]. …”

Section: Figurementioning

confidence: 99%

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Hasan,

Wang,

Pala

et al. 2024

Nanomaterials

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High thermal conductivity and a high breakdown field make diamond a promising candidate for high-power and high-temperature semiconductor devices. Diamond also has a higher radiation hardness than silicon. Recent studies show that diamond has exceptionally large electron and hole momentum relaxation times, facilitating compact THz and sub-THz plasmonic sources and detectors working at room temperature and elevated temperatures. The plasmonic resonance quality factor in diamond TeraFETs could be larger than unity for the 240–600 GHz atmospheric window, which could make them viable for 6G communications applications. This paper reviews the potential and challenges of diamond technology, showing that diamond might augment silicon for high-power and high-frequency compact devices with special advantages for extreme environments and high-frequency applications.

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“…As the density and distribution of 2D carriers are quite sensitive to the status of the adsorbate, additional deposition of dielectric materials for surface protection is mandatorily adopted for diamond-based field effect transistors (FETs) to protect the adsorbate. [25][26][27][28][29][30] However, the carrier density and the device's operating lifetime still fall behind other competitors, [31][32][33] like AlGaN/GaN systems of which 2D carriers are intrinsically generated by the polarization discontinuity from the bulk.…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional ambipolar carriers of giant density at the diamond/cubic-BN(111) interfaces: toward complementary logic and quantum applications

Zhu,

Su,

Ren

et al. 2023

Phys. Chem. Chem. Phys.

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High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al₂O₃

Cited by 24 publications

References 33 publications

Diamond for Electronics: Materials, Processing and Devices

Diamond for Electronics: Materials, Processing and Devices

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Two-dimensional ambipolar carriers of giant density at the diamond/cubic-BN(111) interfaces: toward complementary logic and quantum applications

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High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al2O3

Cited by 24 publications

References 33 publications

Diamond for Electronics: Materials, Processing and Devices

Diamond for Electronics: Materials, Processing and Devices

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Two-dimensional ambipolar carriers of giant density at the diamond/cubic-BN(111) interfaces: toward complementary logic and quantum applications

Contact Info

Product

Resources

About

High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al₂O₃