High operating temperature InAs/GaSb type-II superlattice detectors on GaAs substrate for the long wavelength infrared

Müller, R.; Gramich, Vera; Wauro, Matthias; Niemasz, Jasmin; Kirste, Lutz; Daumer, V.; Janaszek, Andrzej; Jureńczyk, Jarosław; Rehm, Robert

doi:10.1016/j.infrared.2018.10.019

Cited by 19 publications

(13 citation statements)

References 4 publications

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“…The mean noise spectral density between 10 kHz and 100 kHz is around 28 pA Hz -1/2 . In an earlier publication temperature-dependent characterization of a single photoconductor device from this sample suggested g-rnoise limited operation [5], which we also assign to the samples discussed here.…”

Section: Electro-optical Characterization Under Backside-illuminationsupporting

confidence: 77%

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Advances on photoconductive InAs/GaSb type-II superlattice long-wavelength infrared detectors for high operating temperature

Müller

Niemasz

Daumer

et al. 2019

Optical Components and Materials XVI

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The fabrication and characterization of InAs/GaSb type-II superlattice long-wavelength infrared (LWIR) photodetectors for high operating temperature (HOT) are assessed regarding possible device yield. We investigate laterally-operated photoconductors with a detector cutoff wavelength in the LWIR at an operating temperature accessible with 3-stage thermoelectric cooling, realized by suitably tailoring the layer composition. Type-II superlattices with a layer composition of 14 monolayers InAs and 7 monolayers GaSb are grown on semi-insulating 3-inch GaAs substrates. We report on the growth of three different buffer layer variants that serve as growth templates for GaSb-based layers on GaAs substrates. The characterization of 75 nominally equal single element detectors per sample evidences the reliability of device processing. The electro-optical evaluation of a randomly chosen subset indicates a high uniformity of responsivity and noise of LWIR InAs/GaSb HOT photoconductors. At 210 K, the devices operate at a cutoff wavelength of 10.5 µm and achieve a mean peak spectral detectivity of 3.3 x 10 8 Jones.

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Section: Electro-optical Characterization Under Backside-illuminationsupporting

confidence: 77%

“…Accordingly, a recent research trend aims at the development of unrestricted T2SL-based HOT detector concepts [2,3,4]. Latest results show that laterallyoperated HOT T2SL photoconductors can approach or even outperform MCT-based devices [3,5].…”

Section: Introductionmentioning

confidence: 99%

Advances on photoconductive InAs/GaSb type-II superlattice long-wavelength infrared detectors for high operating temperature

Müller

Niemasz

Daumer

et al. 2019

Optical Components and Materials XVI

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“…The first buffer layer is a metamorphic GaAsSb buffer, in which Sb gradually replaces As over 2 µm layer width. This results in a strain relaxed GaSb-like growth template for the subsequent layers [ 23 ]. The second buffer layer consists of 10 µm GaSb.…”

Section: Design Growth Processing and Module Integration Of An Imentioning

confidence: 99%

“…Within the last few years, we have worked on the development of InAs/GaSb T2SL single element detectors for the HOT range and demonstrated that they can be combined with the immersion lens technology of VIGO system [ 23 , 24 , 25 ]. In this paper, we briefly describe the layout of the detector as a laterally-operated photoconductor, the superlattice and buffer layer growth as well as the detector processing.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectrically-Cooled InAs/GaSb Type-II Superlattice Detectors as an Alternative to HgCdTe in a Real-Time Mid-Infrared Backscattering Spectroscopy System

et al. 2020

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We report on the development of thermoelectrically cooled (TE-cooled) InAs/GaSb type-II superlattice (T2SL) single element infrared (IR) photodetectors and exemplify their applicability for real-time IR spectroscopy in the mid-infrared in a possible application. As the European Union’s Restriction of Hazardous Substances (RoHS) threatens the usage of the state-of-the-art detector material mercury cadmium telluride (MCT), RoHS-compatible alternatives to MCT have to be established for IR detection. We use bandgap engineered InAs/GaSb T2SLs to tailor the temperature-dependent bandgap energy for detection throughout the required spectral range. Molecular beam epitaxy of superlattice samples is performed on GaAs substrates with a metamorphic GaAsSb buffer layer. Photolithographic processing yields laterally-operated T2SL photodetectors. Integrated in a TE-cooled IR detector module, such T2SL photodetectors can be an alternative to MCT photodetectors for spectroscopy applications. Here, we exemplify this by exchanging a commercially available MCT-based IR detector module with our T2SL-based IR detector module in a real-time mid-infrared backscattering spectroscopy system for substance identification. The key detector requirements imposed by the spectroscopy system are a MHz-bandwidth, a broad spectral response, and a high signal-to-noise ratio, all of which are covered by the reported T2SL-based IR detector module. Hence, in this paper, we demonstrate the versatility of TE-cooled InAs/GaSb T2SL photodetectors and their applicability in an IR spectroscopy system.

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“…Therefore, the heteroepitaxial deposition of GaSb and related type-I heterostructures on Si substrates to realize IR laser sources and photodetectors would finally lead to fully integrated optical sensors. In addition, the monolithic growth of InAs/GaSb type-II superlattices (T2SL) for cooled IR imager applications would open up the door to higher integration density, more advanced large-scale device fabrication and reduced substrate cost [8,9].…”

Section: Introductionmentioning

confidence: 99%

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Baryshnikova

Mols

Ishii³

et al. 2020

Crystals

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Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs for the realization of nano-ridge (NR) laser diodes and heterojunction bipolar transistors on 300 mm Si wafers. In this report we extend NRE to GaSb for the integration of narrow bandgap heterostructures on Si. GaSb is deposited by selective area growth in narrow oxide trenches fabricated on 300 mm Si substrates to reduce the defect density by aspect ratio trapping. The GaSb growth is continued and the NR shape on top of the oxide pattern is manipulated via NRE to achieve a broad (001) NR surface. The impact of different seed layers (GaAs and InAs) on the threading dislocation and planar defect densities in the GaSb NRs is investigated as a function of trench width by using transmission electron microscopy (TEM) as well as electron channeling contrast imaging (ECCI), which provides significantly better defect statistics in comparison to TEM only. An InAs/GaSb multi-layer heterostructure is added on top of an optimized NR structure. The high crystal quality and low defect density emphasize the potential of this monolithic integration approach for infrared optoelectronic devices on 300 mm Si substrates.

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High operating temperature InAs/GaSb type-II superlattice detectors on GaAs substrate for the long wavelength infrared

Cited by 19 publications

References 4 publications

Advances on photoconductive InAs/GaSb type-II superlattice long-wavelength infrared detectors for high operating temperature

Advances on photoconductive InAs/GaSb type-II superlattice long-wavelength infrared detectors for high operating temperature

Thermoelectrically-Cooled InAs/GaSb Type-II Superlattice Detectors as an Alternative to HgCdTe in a Real-Time Mid-Infrared Backscattering Spectroscopy System

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

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