High Off-State Impedance Gate Driver of SiC MOSFETs for Crosstalk Voltage Elimination Considering Common-Source Inductance

Li, Chengmin; Lu, Zhebie; Chen, Ying; Li, Chushan; Luo, Haoze; Li, Wuhua; He, Xiangning

doi:10.1109/tpel.2019.2932263

Cited by 68 publications

(25 citation statements)

References 26 publications

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“…Different methods have been used, including the use of a large resistor for turn-ON and small resistor for turn-OFF or turning-OFF the device with a negative gate voltage [29]. There is plenty of academic research activity in gate drivers for suppression of cross-talk, like [30]- [32].…”

Section: B Shoot-through Current Methodsmentioning

confidence: 99%

Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs

Gonzalez

Alatise

Mawby

2020

2020 IEEE International Reliability Physics Symposium (IRPS)

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Section: B Shoot-through Current Methodsmentioning

confidence: 99%

Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs

Gonzalez

Alatise

Mawby

2020

2020 IEEE International Reliability Physics Symposium (IRPS)

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“…The auxiliary power supply was compatible with wide input voltage and operating temperature ranges because of the exclusion of low-temperature linear optocouplers. Li et al [ 67 ] focused on crosstalk elimination. High off-state gate impedance was employed to eliminate the voltage drop on the common-source inductance, while the potential fault turn-on was prevented by utilizing the pre-charged voltage in the gate-source capacitance.…”

Section: Review On Sic Mosfet Driving Circuitsmentioning

confidence: 99%

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

2021

Micromachines

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Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabilities of higher switching frequencies with less switching and conduction losses. However, to make the most of their advantages, it is crucial to understand the intrinsic differences between WBG- and Si-based switching devices and investigate effective means to safely, efficiently, and reliably utilize the WBG devices. This paper aims to provide engineers in the power engineering field a comprehensive understanding of WBG switching devices’ driving requirements, especially for mid- to high-power applications. First, the characteristics and operating principles of WBG switching devices and their commercial products within specific voltage ranges are explored. Next, considerations regarding the design of driving circuits for WBG switching devices are addressed, and commercial drivers designed for WBG switching devices are explored. Lastly, a review on typical papers concerning driving technologies for WBG switching devices in mid- to high-power applications is presented.

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“…The exploitation of the source inductance to mitigate the turn-on oscillations, however, comes at the cost of worsening the switching performance during the turn-off, as highlighted in [24][25][26]. Indeed, the unavoidable presence of the source inductance and of the gate-drain capacitance is the root cause of a cross-talk phenomenon between the input loop (gate driver) and the output loop (power loop).…”

Section: Transistor Feedback Through the Source Inductancementioning

confidence: 99%

Investigations on the Use of the Power Transistor Source Inductance to Mitigate the Electromagnetic Emission of Switching Power Circuits

Raviola

Fiori

2021

Signals

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With power designers always demanding for faster power switches, electromagnetic interference has become an issue of primary concern. As known, the commutation of power transistors is the main cause of the electromagnetic noise, which can be worsened by the presence of unwanted oscillations superimposed onto the switching waveforms. This work proposes a solution to mitigate the oscillations caused by the turn-on of a power transistor by exploiting its source inductance plus an external one. In this context, an optimization method is proposed to find the optimal value of the source inductance as a trade-off between oscillation damping and power dissipation. The experimental results performed on a prototyped power converter assess the proposed technique as the spectrum of the conducted emission is attenuated by 20 dB at the oscillation frequency. With respect to traditional solution based on snubbers, the proposed solution results in a similar oscillation damping, but with a 0.5% higher power efficiency.

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High Off-State Impedance Gate Driver of SiC MOSFETs for Crosstalk Voltage Elimination Considering Common-Source Inductance

Cited by 68 publications

References 26 publications

Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs

Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

Investigations on the Use of the Power Transistor Source Inductance to Mitigate the Electromagnetic Emission of Switching Power Circuits

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