High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy

Observation of defect complexes containing Ga vacancies in GaAsN

“…A detailed description of the growth parameters can be found in Ref. 16. The samples consist of a 50-nm-thick GaAs buffer, a GaAs 1Ϫx N x layer with a thickness of 170 nm and composition x ranging from 0 to 0.05, and a 3-nm-thick GaAs cap layer.…”

“…Figure 5 shows the PL efficiency and the V Ga concentra- The maximum PL efficiency is obtained by annealing for 10 min at 700°C under H 2 carrier gas flow and TBAs excess ambient in the MOVPE reactor. 16,25 This procedure reduces the V Ga density by a factor of 5 compared to that found in as-grown material. The ratio between the V Ga concentration and the PL intensity is about the same as in the as-grown GaAsN layers with increasing N composition.…”

Tensile-strained GaAsN quantum dots on InP

“…With these flows the DMHy/TBAs ratio corresponds to a nitrogen composition of ϳ5.5% in the layer in this reactor. 10 All the growth temperatures mentioned are thermocouple readings and all the layer thicknesses are nominal deposition thicknesses.…”

“…This TBAs/III ratio also gives a good incorporation of nitrogen into GaAsN on GaAs and it is also the minimum for high quality GaAsN. 10 The growth rate was varied between 2.8 and 8.5 Å / s, which corresponds to 1 -3 ML/ s for GaAs. The growth rate of 5.0 Å / s was chosen because no significant differences were observed.…”

Nitridation of GaAs Surface by Low Energy Ion Implantation with In Situ Control of Chemical Composition

“…Unfortunately, higher nitrogen concentrations x > 0.03 in alloys are difficult to achieve by means of basic growth technologies (Henini, 2005). There have been only a few reports published since 1997 about more concentrated GaAsN alloys (Bi & Tu, 1997;Toivonen et al, 2000;Moody et al, 2002;Veal et al, 2004). The physical restriction in fabricating alloys with higher nitrogen concentrations may be in their instability at growth temperatures typically www.intechopen.com Ion Implantation 184 exceeding 550÷650 o C (Mikoushkin et al, 2008).…”