High-Mobility ZnO Nanorod Field-Effect Transistors by Self-Alignment and Electrolyte-Gating

Thiemann, Stefan; Gruber, Matthias; Lokteva, Irina; Hirschmann, Johannes; Halik, Marcus; Zaumseil, Jana

doi:10.1021/am3026739

Cited by 69 publications

(74 citation statements)

References 40 publications

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“…However, the electron mobility is typically found to be slightly higher than the hole mobility, by up to a factor of 2. So perhaps it is the case that the ZnO scaffold (mobility presumably greater than 10 cm 2 V À1 s À1 ) [40] selectively enhances the transport of the faster carrier.…”

Section: Zno-scaffold Solar Cellsmentioning

confidence: 99%

Substrate‐Oriented Nanorod Scaffolds in Polymer–Fullerene Bulk Heterojunction Solar Cells

et al. 2014

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The use of a p-type inorganic semiconductor to form a nanorod scaffold within a polymer-fullerene bulk heterojunction solar cell is reported. The performance of this cell is compared to those made of the commonly used n-type scaffold of ZnO, which has been reported many times in the literature. The scaffold is designed to improve charge-carrier collection by increased mobility in thicker samples. Observations show that generally the device performance shows a negative correlation to nanorod length. By using CuSCN as a p-type inorganic scaffold, a very similar trend is observed.

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Section: Zno-scaffold Solar Cellsmentioning

confidence: 99%

Substrate‐Oriented Nanorod Scaffolds in Polymer–Fullerene Bulk Heterojunction Solar Cells

et al. 2014

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“…In mainstream use for organic TFTs the dominant dielectric materials of choice are polymer dielectrics such as poly(methyl methacrylate) (PMMA), CYTOP™ or benzocyclobutene (BCB) due to their good film forming properties, but the tradeoff is the low intrinsic relative dielectric permittivity ( ε r = 1.0–3.5) and need for thick films. For low voltage operation a range of high- k gate dielectrics have been considered, including self-assembled monolayer dielectrics, 11–13 ion gel-polymer electrolytes, 14,15 and more recently ferroelectric materials. 16 For solution processed, wide bandgap metal oxide TFTs, most studies have used thermal SiO 2 or vacuum deposited SiN x as insulating layer, since the focus has been on developing solution processable semiconducting materials.…”

Section: Introductionmentioning

confidence: 99%

Identification of dipole disorder in low temperature solution processed oxides: its utility and suppression for transparent high performance solution-processed hybrid electronics

et al. 2016

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“…Two separate measurements had been performed for each sample: 1) short time (<1 ns) measurements using optically delayed pulses with ≈150 fs width and 2) long time (>1 ns) measurements using electrically delayed pulses with ≈1 ns width. [ 31 ] Thus we can ascribe the lower performance of the ZnO nanorods due to ineffi cient ordering in the electron extraction layer. This slow dissociation of excitons is likely to be due to the large proportion of PC 70 BM phase (80%) Adv.…”

Section: ) Fi Lm II By Spin-coating Pcdtbt: Pc 70 Bm In the Ternary mentioning

confidence: 99%

All‐Inkjet‐Printed, All‐Air‐Processed Solar Cells

Jung

Sou

Banger

et al. 2014

Advanced Energy Materials

151

112

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deposition processes. Despite impressive progress over the last decade, OPVs are still some way behind other thin-fi lm technologies harvesting solar energy because of low effi ciencies and short lifetimes. [ 5 ] Materials for OPVs such as the semiconducting polymers, transparent electrodes, substrates, and encapsulant materials are not cheap enough to be competitive for large-area power generation. Nevertheless, there are small-scale, energy harvesting applications where OPVs are required to be locally printed to provide electric power to the system. For example, system-in-foil devices could include sensor components, OPVs for energy harvesting, a thin fi lm battery for energy storage, and an organic light-emitting diode (OLED) array as a display and electronic circuitry on a single substrate. [ 6 ] To date, no route is available for monolithically integrating solar cells into a system in which other components such as transistors, sensors, or displays are already fabricated.Here, we report for the fi rst time the fabrication and measurement of all-inkjet-printed, all-air-processed organic solar cells with the structure poly(3,4-ethylenedioxythi ophene):polystyrene sulfonate (PEDOT:PSS)/poly[N-9′heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′benzothiadiazole)]:[6,6]-phenyl-C71-butyric acid methyl ester (PCDTBT:PC 70 BM)/ZnO/Ag. A schematic diagram of the printed solar cell structure and the energy level diagram of its components is presented in Figure 1 . Among the various printing methods, inkjet-printing technology has been selected here for the fabrication of all-printed bulk-heterojunction solar cells because of its capability to locally deposit small volumes of functional inks without a mask and with high positional accuracy and low cost. Inkjet printing has proven effective in fabrication of OLEDs, [ 7 ] thin-fi lm transistors, [ 8 ] and photodetectors, [ 9,10 ] and was recently applied to fabricate either an active layer or an anode of OPVs. [11][12][13][14] We demonstrate a high-effi ciency solar cell with a homogeneous inkjet-printed donor-acceptor thin fi lm which was achieved by engineering the semiconducting blend ink with a tailored ternary solvent. Atomic force microscopy (AFM), grazing incidence wide-angle X-ray scattering (GIWAXS), and transient absorption spectroscopy are used to explore surface morphology, fi lm microstructure, and polaron dynamics in both inkjet-printed and spin-coated PCDTBT:PCBM fi lms. The results have shown that our inkjet-printed blend layer exhibits similar nanoscale structure and excited state dynamics to its spin-coated counterparts.The prospective of using direct-write printing techniques for the manufacture of organic photovoltaics (OPVs) has made these techniques highly attractive. OPVs have the potential to revolutionize small-scale portable electronic applications by directly providing electric power to the systems. However, no route is available for monolithically integrating the energy-harvesting units into a system in which other components, suc...

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High-Mobility ZnO Nanorod Field-Effect Transistors by Self-Alignment and Electrolyte-Gating

Cited by 69 publications

References 40 publications

Substrate‐Oriented Nanorod Scaffolds in Polymer–Fullerene Bulk Heterojunction Solar Cells

Substrate‐Oriented Nanorod Scaffolds in Polymer–Fullerene Bulk Heterojunction Solar Cells

Identification of dipole disorder in low temperature solution processed oxides: its utility and suppression for transparent high performance solution-processed hybrid electronics

All‐Inkjet‐Printed, All‐Air‐Processed Solar Cells

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