Identification of dipole disorder in low temperature solution processed oxides: its utility and suppression for transparent high performance solution-processed hybrid electronics

Banger, Kulbinder K.; Warwick, Christopher; Jiang, Lang; Broch, Katharina; Halpert, Jonathan E.; Socratous, Josephine; Brown, Adam R.; Leedham, T.L.; Sirringhaus, Henning

doi:10.1039/c6sc01962e

Cited by 41 publications

(56 citation statements)

References 47 publications

(42 reference statements)

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“…Figure 4a shows that the devices have a stable capacitance value over a wide frequency range (1 Hz–1 MHz) for the different annealing conditions. The capacitance–frequency (CF) factor, calculated as the ratio between low (1 Hz) and high‐frequency capacitance (0.1 MHz), is smaller than 1.2 (Figure S7a, Supporting Information), indicating that an increase in the low‐frequency capacitance observed with conventional sol–gel route is absent in the printed films 44. Such effect can be explained by residual hydroxyl groups and proton hopping and can lead to device instability and overestimation of the device mobility.…”

Section: Resultsmentioning

confidence: 99%

Printed, Highly Stable Metal Oxide Thin‐Film Transistors with Ultra‐Thin High‐κ Oxide Dielectric

Carlos

Leppäniemi

Sneck

et al. 2020

Adv Elect Materials

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Lately, printed oxide electronics have advanced in the performance and low‐temperature solution processability that are required for the dawn of low‐cost flexible applications. However, some of the remaining limitations need to be surpassed without compromising the device electronic performance and operational stability. The printing of a highly stable ultra‐thin high‐κ aluminum‐oxide dielectric with a high‐throughput (50 m min−1) flexographic printing is accomplished while simultaneously demonstrating low‐temperature processing (≤200 °C). Thermal annealing is combined with low‐wavelength far‐ultraviolet exposure and the electrical, chemical, and morphological properties of the printed dielectric films are studied. The high‐κ dielectric exhibits a very low leakage‐current density (10−10 A cm−2) at 1 MV cm−1, a breakdown field higher than 1.75 MV cm−1, and a dielectric constant of 8.2 (at 1 Hz frequency). Printed indium oxide transistors are fabricated using the optimized dielectric and they achieve a mobility up to 2.83 ± 0.59 cm2 V−1 s−1, a subthreshold slope <80 mV dec−1, and a current ON/OFF ratio >106. The flexible devices reveal enhanced operational stability with a negligible shift in the electrical parameters after ageing, bias, and bending stresses. The present work lifts printed oxide thin film transistors a step closer to the flexible applications of future electronics.

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Section: Resultsmentioning

confidence: 99%

Printed, Highly Stable Metal Oxide Thin‐Film Transistors with Ultra‐Thin High‐κ Oxide Dielectric

Carlos

Leppäniemi

Sneck

et al. 2020

Adv Elect Materials

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“…In the case of the 150 °C-annealed AlO x gate dielectric, an average field-effect mobility of 183.0 cm 2 /Vs was observed, which is remarkably high as compared to those made with SiO 2 gate dielectrics [ 23 , 24 ]. The exceptionally high mobility observed using the AlO x gate dielectric can be attributed to the formation of an EDL due to a large amount of residual –OHs inside the AlO x films [ 25 ]. In addition to the positive gate bias, a substantial number of electrons are accumulated near the AlO x /InO x interface due to the EDL formation.…”

Section: Resultsmentioning

confidence: 99%

Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

Heo

Choi

et al. 2017

Materials

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In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlOx) and poly(4-vinylphenol) (PVP), exhibited high dielectric constant (ε~8.15) and high-frequency-stable characteristics (1 MHz). Using the ionic-type HGD as a gate dielectric layer, an minimal electron-double-layer (EDL) can be formed at the gate dielectric/InOx interface, enhancing the field-effect mobility of the TFTs. Particularly, using the ionic-type HGD gate dielectrics annealed at 350 °C, InOx TFTs having an average field-effect mobility of 16.1 cm2/Vs were achieved (maximum mobility of 24 cm2/Vs). Furthermore, the ionic-type HGD gate dielectrics can be processed at a low temperature of 150 °C, which may enable their applications in low-thermal-budget plastic and elastomeric substrates. In addition, we systematically studied the operational stability of the InOx TFTs using the HGD gate dielectric, and it was observed that the HGD gate dielectric effectively suppressed the negative threshold voltage shift during the negative-illumination-bias stress possibly owing to the recombination of hole carriers injected in the gate dielectric with the negatively charged ionic species in the HGD gate dielectric.

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“…Compared with the solution processed Indium-based TFTs reported by recent works [11][12][13][14][15], the mobility of TFTs fabricated by the process proposed and optimized in this work is 2~4 times higher ( Table Ⅰ). The TFTs were used to build inverters successfully.…”

Section: Introductionmentioning

confidence: 64%

Enhancement on the performance of eco-friendly solution-processed InO/AlO thin-film transistors via lithium incorporation

Zhao

Zhang

et al. 2020

Journal of Alloys and Compounds

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Identification of dipole disorder in low temperature solution processed oxides: its utility and suppression for transparent high performance solution-processed hybrid electronics

Abstract: Identification of long-lived dipole disorder in low-temp solution processed dielectrics, and it's suppression.

Cited by 41 publications

References 47 publications

Printed, Highly Stable Metal Oxide Thin‐Film Transistors with Ultra‐Thin High‐κ Oxide Dielectric

Printed, Highly Stable Metal Oxide Thin‐Film Transistors with Ultra‐Thin High‐κ Oxide Dielectric

Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

Enhancement on the performance of eco-friendly solution-processed InO/AlO thin-film transistors via lithium incorporation

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