High mobility solution-processed C<sub>8</sub>-BTBT organic thin-film transistors via UV-ozone interface modification

Wei, Weiyao; Yang, Cheng; Mai, Jiaying; Gong, Yanfen; Yan, Longsen; Zhao, Kai; Ning, Honglong; Wu, Sujuan; Gao, Jinwei; Gao, Xingsen; Zhou, Guofu; Lu, Xubing; Liu, J.-M.

doi:10.1039/c7tc03794e

Cited by 38 publications

(41 citation statements)

References 35 publications

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“…Although the latter has been formerly perceived as an intrinsic material property, more recent research results highlight the importance of material processing and the effectiveness of process optimization for the increase of transistor mobility. [23] In another study, improved performance in this C8-BTBT:PMMA blend system has been shown to be triggered by aforementioned zone-refinement effect, also referred to as in situ purification. [21] Enhanced intergrain connectivity, reduced density of interface traps and energetic disorder, and a zone-refinement effect were suggested as possible mechanisms for how the addition of PS yields improved charge carrier mobilities.…”

Section: Introductionmentioning

confidence: 87%

“…[24] Moreover, peak values of 9.1 cm 2 V −1 s −1 were reported for the same blend after recrystallization via solvent-vapor-annealing (SVA). [5,14,23,27,28] This behavior is considered to be caused by gate-voltage-dependent contact resistance, and makes a consistent extraction of mobility values very difficult, rendering a direct comparison of reported mobilities challenging and of limited usefulness. In particular, a mobility of 9.2 cm 2 V −1 s −1 has been extracted from blade-cast devices, prepared by a similar technology as utilized in our work.…”

Section: Introductionmentioning

confidence: 99%

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High‐Mobility, Solution‐Processed Organic Field‐Effect Transistors from C8‐BTBT:Polystyrene Blends

Haase

Rocha

Hauenstein

et al. 2018

Adv Elect Materials

102

101

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record values exceeding 10 cm 2 V −1 s −1 have been reported. [3][4][5][6][7][8] Though these results are promising, some of these reported values suffer from overestimation, [9,10] require significant engineering efforts, [3] complex fabrication procedures, [4] or employ nonscalable fabrication techniques, [5] ultimately highlighting the need for alternative and potentially more industry-relevant processing methods. We believe that adjustments to existing solution coating methods rather than intensive technology engineering could result in a feasible and simple approach.Ink properties such as the solvents' boiling point, [11] solubility parameters, [12] or the solute concentration [13] can be tuned in order to control crystal growth and packing in a manner that provides favorable electrical characteristics. Such ink engineering has recently been shown to generate high mobility devices based on C8-BTBT. [14] In particular, a distinct increase of performance by utilizing a solvent mixture rather than a single solvent has been reported for a range of semiconductors, including TIPS-pentacene [15,16] or diketopyrrolopyrrole (DPP)-based polymers. [17] This approach has frequently been combined with another effective method -the addition of a polymer additive to the printing solution. This combination has been shown to significantly reduce the device-to-device variations and yielded improved transistor performances when applied to high-mobility small molecules, like TIPS-pentacene, [18] diF-TES-ADT, [8,19,20] or even C8-BTBT. [5,7,21,22] In this study, we explore various blends of the high-mobility semiconductor C8-BTBT with the inert polymer polystyrene (PS) with the objective of improving device-to-device uniformity and investigating the effect on device characteristics. We report improved film formation that results in the reduction of deviceto-device variations and the reliable fabrication of high-mobility organic field-effect transistors by a scalable, meniscus-guided coating method, and demonstrate OFETs based on C8-BTBT, that to the best of our knowledge show the highest intrinsic mobility so far reported. Results and Discussion Discussion of C8-BTBT-Based Devices in LiteratureIn the literature, the blending of C8-BTBT and PS led to improvements in the effective mobility of organic field-effect Organic field-effect transistors based on aligned small molecule semiconductors have shown high charge carrier mobilities in excess of 10 cm 2 V −1 s −1 . This makes them a viable alternative to amorphous inorganic semiconductors especially if a high reproducibility can be achieved. Here, the optimization of high mobility organic field-effect transistors based on the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b] benzothiophene (C8-BTBT) via the addition of a polymer additive to the printing solution is reported. Specifically, films and devices are compared based on solutions of the neat semiconductor and the blend with polystyrene and shear-coated devices with excellent device characteristics and gate-voltage-ind...

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Section: Introductionmentioning

confidence: 87%

Section: Introductionmentioning

confidence: 99%

High‐Mobility, Solution‐Processed Organic Field‐Effect Transistors from C8‐BTBT:Polystyrene Blends

Haase

Rocha

Hauenstein

et al. 2018

Adv Elect Materials

102

101

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“…For example, by optimizing the spinning speed and improving the wettability of SiO 2 via UV–ozone treatment, Saiki's group obtained the highest mobility at 2.6 cm 2 V −1 s −1 on SiO 2 . By optimizing the dielectric wettability via controlling the UV–ozone treatment period, Liu's group obtained the highest mobility at 6.5 cm 2 V −1 s −1 on SiO 2 at the fixed spinning speed of 2000 rpm . Here, we not only optimized the spinning speed, but also applied a C‐PVA dielectric to provide a more suitable surface for spin‐coating.…”

mentioning

confidence: 99%

“…Here, we not only optimized the spinning speed, but also applied a C‐PVA dielectric to provide a more suitable surface for spin‐coating. Despite the films with step‐and‐terrace layer structures appearing both on SiO 2 and C‐PVA (Figure S7, Supporting Information), the films on the C‐PVA dielectric showed a smaller roughness, which is more beneficial for increasing the carrier mobility . Obvious holes and discontinuous grains can be observed for the C8‐BTBT thin film deposited on the SiO 2 dielectric.…”

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confidence: 99%

High‐Performance, Ultrathin, Ultraflexible Organic Thin‐Film Transistor Array Via Solution Process

Ren

Cui

Tang

et al. 2018

Small

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Ultrathin organic thin-film transistors (OTFTs) have received extensive attention due to their outstanding advantages, such as extreme flexibility, good conformability, ultralight weight, and compatibility with low-cost and large-area solution-processed techniques. However, compared with the rigid substrates, it still remains a challenge to fabricate high-performance ultrathin OTFTs. In this study, a high-performance ultrathin 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) OTFT array is demonstrated via a simple spin-coating method, with mobility as high as 11 cm V s (average mobility: 7.22 cm V s ), on/off current ratio of over 10 , switching current of >1 mA, and a good yield ratio as high as 100%. The ultrathin thickness at ≈380 nm and the ultralight weight at ≈0.89 g m enable the free-standing OTFTs to imperceptibly adhere onto human skin, and even a damselfly wing without affecting its flying. More importantly, the OTFTs show good electrical characteristics and mechanical stability when conformed onto the curved surfaces and even folded in a book after 100 folding cycles. These results illustrate the broad application potential of this simply fabricated ultrathin OTFT in next-generation electronics such as foldable displays and wearable devices.

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“…2d). It is known that the smaller the value of FWHM, the higher the crystal quality [11,33,34]. Judging from the XRD measurements, a low withdrawal speed during dip-coating resulted in high crystallinity [35][36][37][38].…”

Section: Resultsmentioning

confidence: 99%

Continuous and highly ordered organic semiconductor thin films via dip-coating: the critical role of meniscus angle

Liu

Zhang

et al. 2020

Sci. China Mater.

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Dip-coating is a low-cost, high-throughput technique for the deposition of organic semiconductors over large area on various substrates. Tremendous studies have been done and many parameters such as withdrawal speed, solvent type and solution concentration have been investigated. However, most of the depositions were ribbons or dendritic crystals with low coverage of the substrate due to the ignorance of the critical role of dynamic solution-substrate interactions during dip-coating. In this study, meniscus angle (MA) was proposed to quantify the real-time in-situ solutionsubstrate interactions during dip-coating. By proper surface treatment of the substrate, the value of MA can be tuned and centimeter-sized, continuous and highly ordered organic semiconductor thin films were achieved. The charge transport properties of the continuous thin films were investigated by the construction of organic field-effect transistors. Maximum (average) hole mobility up to 11.9(5.1) cm 2 V −1 s −1 was obtained. The average mobility was 82% higher than that of ribbon crystals, indicating the high crystallinity of the thin films. Our work reveals the critical role of dynamic solutionsubstrate interactions during dip-coating. The ability to produce large-area, continuous and highly ordered organic semiconductor thin films by dip-coating could revival the old technique for the application in various optoelectronics.

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High mobility solution-processed C₈-BTBT organic thin-film transistors via UV-ozone interface modification

Abstract: UV-ozone exposure directly on the dielectric surface to get an OTFT mobility as high as 6.50 cm2(V s)−1.

Cited by 38 publications

References 35 publications

High‐Mobility, Solution‐Processed Organic Field‐Effect Transistors from C8‐BTBT:Polystyrene Blends

High‐Mobility, Solution‐Processed Organic Field‐Effect Transistors from C8‐BTBT:Polystyrene Blends

High‐Performance, Ultrathin, Ultraflexible Organic Thin‐Film Transistor Array Via Solution Process

Continuous and highly ordered organic semiconductor thin films via dip-coating: the critical role of meniscus angle

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High mobility solution-processed C8-BTBT organic thin-film transistors via UV-ozone interface modification

Abstract: UV-ozone exposure directly on the dielectric surface to get an OTFT mobility as high as 6.50 cm2(V s)−1.

Cited by 38 publications

References 35 publications

High‐Mobility, Solution‐Processed Organic Field‐Effect Transistors from C8‐BTBT:Polystyrene Blends

High‐Mobility, Solution‐Processed Organic Field‐Effect Transistors from C8‐BTBT:Polystyrene Blends

High‐Performance, Ultrathin, Ultraflexible Organic Thin‐Film Transistor Array Via Solution Process

Continuous and highly ordered organic semiconductor thin films via dip-coating: the critical role of meniscus angle

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High mobility solution-processed C₈-BTBT organic thin-film transistors via UV-ozone interface modification