High-mobility modulation-doped SiGe-channel p-MOSFETs

Abstract

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Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

“…This mobility enhancement is excellent compared with those reported by other investigators. 75,76) The subthreshold slopes (about 80 mV/decade at 300 K and about 30 mV/decade at 77 K) of the Si 0:5 Ge 0:5 -channel MOSFET were comparable to those of the MOSFETs without a Si 1Àx Ge x channel. This indicates that defect density in the Si 0:5 Ge 0:5 layer is low.…”

Improved electron mobility in InSb epilayers and quantum wells on off-axis Ge (001) substrates

“…3 This implies that, if CMOSFETs were made with these InSb and Ge QWs, the electron mobilities in the InSb QWs would not be the main limiting factor for the high speed operation of the CMOSFETs. 25,26 Although the RT electron mobilities in InSb QWs grown on Ge (001) may be high enough for CMOSFETs based on the current Ge-QW technology, the InSb-QW mobilities themselves have much room for improvement. The RT electron mobility in the InSb QW grown on a 6 -off-axis Ge (001) substrate, 14 000 cm 2 /(V s), is smaller than for its counterpart grown on a 2 -off-axis GaAs (001) substrate, by a factor of 3.…”

Mobility simulation of a novel Si/SiGe FET structure

“…Recently, the possibility of record high p,ffvalues in Si/SiGe heterostructures has been demonstrated both at low [2] and room temperature [3], [4], [5]. These results are very promising in terms of the possibilities offered by this new technology, but much work is still required to clarify unambiguously its role as a high-speed alternative in future ULSI developments.…”