High mobility metal oxide thin film transistors active-matrix organic light-emitting diode television

Development of flexible displays using back-channel-etched In-Sn-Zn-O thin-film transistors and air-stable inverted organic light-emitting diodes

“…In contrast, many diffraction spots that indicate crystallinity were observed in the n‐ED pattern for the ITZO film; therefore, the ITZO film used in this study has a microcrystal structure. Although several TFTs that use amorphous ITZO have been already reported, it is considered that the crystallinity is dependent on the composition ratio, deposition conditions, and the TFT fabrication process. To evaluate the electrical properties of the ITZO film, the carrier density and Hall mobility were measured by Hall‐effect measurements using the Van der Pauw method.…”

“…However, the mobility required for TFTs increases with the number of pixels, display size, and frame rate. It is estimated that a mobility level surpassing that of IGZO (approximately 10 cm 2 /Vs) is necessary for 8 K SHV OELD displays larger than 100 in.. Indium–tin–zinc–oxide (ITZO) is a promising material for sheet‐type 8 K SHV OLED displays because it has achieved a higher mobility than IGZO . Furthermore, ITZO may facilitate the fabrication of a back‐channel‐etched (BCE) structure without an etch‐stopper (ES) layer on the semiconductor, which leads to a shorter channel length and smaller parasitic capacitance than that with the conventional ES structure widely used in IGZO‐TFTs because of its insolubility in the phosphoric, acetic, and nitric acid (PAN) etchants used to pattern Mo and Al source/drain (S/D) electrodes.…”

Relationship between crystallinity and device characteristics of In-Sn-Zn oxide

“…Recently, other oxide semiconductor materials, In‐Sn‐Zn oxide (ITZO) and so on, have attracted attention because of their higher mobility. The preproduction prototype of an AMOLED‐TV using an ITZO‐FET as a backplane has been reported …”

65.3: Development of Flexible Displays using Back‐Channel‐Etched In–Sn–Zn–O TFTs and Air‐Stable Inverted OLEDs

“…It is estimated that a mobility level surpassing that of IGZO (approximately 10 cm 2 /Vs) is necessary for 8K SHV OELD displays larger than 100 inches. Indium-tin-zinc-oxide (ITZO) is a promising material for large-sized 8K SHV flexible OLED displays because it has achieved a higher mobility than IGZO [7][8][9]. Furthermore, ITZO may facilitate fabrication of a backchannel etched (BCE) structure, leading to shorter channel length and smaller parasitic capacitance than in etch-stopper structure which is widely used in IGZO-TFTs because of its insolubility in the phosphoric, acetic, and nitric acid (PAN) etchants [8] used to pattern Mo and Al source/drain (S/D) electrodes.…”