High-Mobility Ge pMOSFETs With Crystalline ZrO<sub>2</sub> Dielectric

Liu, Huan; Han, Genquan; Xu, Yue; Liu, Yan; Liu, Tsu‐Jae King; Hao, Yue

doi:10.1109/led.2019.2895856

Cited by 20 publications

(14 citation statements)

References 17 publications

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“…Finally, the post metallization annealing (PMA) at The unified thickness of the Al2O3/GeOx interfacial layer (IL) for wafer A is ~ 1.2 nm indicating the 0.2~0.3 nm GeOx. For the device on wafer B, an ultrathin GeOx IL was experimentally demonstrated [7].…”

Section: Methodsmentioning

confidence: 99%

“…But for Ge n-channel MOSFETs, the low effective carrier mobility (μeff) strongly limits the performance of the transistors. Various surface passivation techniques including Si passivation [1], plasma post oxidation [4], and InAlP passivation [5], and several high-κ dielectrics including HfO2, ZrO2 [6][7][8], Y2O3 [9], and La2O3 [10] have been explored in Ge nMOSFETs to boost the electron μeff. It was demonstrated that ZrO2 dielectric integrated with Ge channel can provide a robust interface due to that a GeO2 interfacial layer can react and intermix with the ZrO2 layer [7] .…”

Section: Introductionmentioning

confidence: 99%

“…Various surface passivation techniques including Si passivation [1], plasma post oxidation [4], and InAlP passivation [5], and several high-κ dielectrics including HfO2, ZrO2 [6][7][8], Y2O3 [9], and La2O3 [10] have been explored in Ge nMOSFETs to boost the electron μeff. It was demonstrated that ZrO2 dielectric integrated with Ge channel can provide a robust interface due to that a GeO2 interfacial layer can react and intermix with the ZrO2 layer [7] . A decent hole μeff has been reported in Ge p-channel transistors [6][7][8], while there is still a lot of room for improvement in electron μeff for their counterparts.…”

Section: Introductionmentioning

confidence: 99%

“…It was demonstrated that ZrO2 dielectric integrated with Ge channel can provide a robust interface due to that a GeO2 interfacial layer can react and intermix with the ZrO2 layer [7] . A decent hole μeff has been reported in Ge p-channel transistors [6][7][8], while there is still a lot of room for improvement in electron μeff for their counterparts. *Corresponding author: gqhan@xidian.edu.cn 1 State Key Discipline Laboratory of Wide Band Gap In this work, Ge nMOSFETs with ZrO2 gate dielectric are fabricated to achieve the improved μeff over Si in the entire range of the inversion charge density (Qinv).…”

Section: Introductionmentioning

confidence: 99%

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Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving the Improved Mobility

Chou

Liu

et al. 2021

Preprint

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High mobility Ge nMOSFETs with ZrO2 gate dielectric are demonstrated and compared against transistors with Al2O3/ZrO2 , ZrO2, and O3 /ZrO 2 gate dielectrics. The Al2O3/ZrO2 provides for dramatically enhanced-effective electron mobility ( μeff ), boosting transistor drive current. Ge nMOSFETs with the Al2O3 /ZrO2 gate insulator achieve a 50% μeff improvement as compared to the Si universal mobility at an inversion charge density ( Qinv ) of 5 × 10 12 cm -2 . An Al2O3 interfacial layer leads to a boost in μeff but increases capacitance equivalent thickness (CET). Utilizing O3 oxidation of Ge surface, Al2O3 -free Ge nMOSFETs having a CET of 1.1 nm obtains a peak μ eff of 682 cm2 /Vs, which is higher than that of the Si universal mobility at the similar Qinv .

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving the Improved Mobility

Chou

Liu

et al. 2021

Preprint

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“…Among these, ZrO 2 dielectric has attracted most attention due to the much higher κ value [12, 13] and the better interfacial quality [14] compared to the Hf-based ones. It has widely been reported that crystallization of ZrO 2 can further improve the electrical performance of Ge pMOSFET, e.g., reducing CET and boosting μ eff [15, 16]. However, there is a lack of study on the impacts of process steps for ZrO 2 crystallization on device performance of Ge transistors.…”

Section: Introductionmentioning

confidence: 99%

High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing

et al. 2019

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This paper investigates the impacts of post metal annealing (PMA) and post deposition annealing (PDA) on the electrical performance of Ge p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ZrO 2 dielectric. For the transistors without PDA, on-state current ( I ON ), subthreshold swing (SS), and capacitance equivalent thickness (CET) characteristics are improved with PMA temperature increasing from 350 to 500 °C. Crystallization of ZrO 2 dielectric at the higher PMA temperature contributes to the increase of the permittivity of ZrO 2 and the decrease of the density of interface states ( D it ), resulting in a reduced CET and high effective hole mobility ( μ eff ). It is demonstrated that Ge pMOSFETs with a PDA treatment at 400 °C have a lower CET and a steeper SS but a lower μ eff compared to devices without PDA.

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On the Bulk Photovoltaic Effect in the Characterization of Strained Germanium Microstructures

Zaitsev,

Spirito,

Frigerio

et al. 2024

Physica Rapid Research Ltrs

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Strain engineering serves as an effective method for optimizing electronic and optical properties in semiconductor devices, with applications including the enhancement of optical emission in Ge and GeSn‐based devices, improvement of carrier mobility, and second harmonic generation in silicon photonics structures. Current methods for deformation characterization in semiconductors, such as X‐ray diffraction and Raman spectroscopy, often require bulky and expensive setups and are limited in vertical resolution. Consequently, techniques capable of measuring lattice strain while overcoming these drawbacks are highly desirable. This study proposes a proof of concept for a cost‐effective, compact, fast, and non‐destructive approach to probe non‐uniform strain fields and additional material properties by exploiting the bulk photovoltage effect. The method is benchmarked with an array of silicon nitride stripes deposited under varying pressure conditions on a germanium substrate. Initially, their surface strains are verified through Raman spectroscopy. The deformations are replicated in a finite element method platform by integrating mechanical simulations with deformation potential theory, thereby estimating the band edge energy landscape. Finally, the study discusses the theoretical behavior of the photovoltage signal, considering semiconductor properties, defects, doping, and deformation. The findings offer insights into the development of advanced techniques for strain and transport analysis in semiconductor materials.

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High-Mobility Ge pMOSFETs With Crystalline ZrO₂ Dielectric

Cited by 20 publications

References 17 publications

Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving the Improved Mobility

Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving the Improved Mobility

High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing

On the Bulk Photovoltaic Effect in the Characterization of Strained Germanium Microstructures

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High-Mobility Ge pMOSFETs With Crystalline ZrO2 Dielectric

Cited by 20 publications

References 17 publications

Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving the Improved Mobility

Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving the Improved Mobility

High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing

On the Bulk Photovoltaic Effect in the Characterization of Strained Germanium Microstructures

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Product

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High-Mobility Ge pMOSFETs With Crystalline ZrO₂ Dielectric