High-mobility electrolyte-gated perovskite transistors on flexible plastic substrate via interface and composition engineering

Hole Mobility Enhancement in Benzo[1,2‐b:4,5‐b']Dithiophene‐Based Conjugated Polymer Transistors through Directional Alignment, Perovskite Functionalization and Solid‐State Electrolyte Gating

“…[47] Consistent with a previous study, the electrolyte dielectric exhibited a high capacitance of over 10 μF cm −2 due to strong polarization through C-F interface dipoles of the fluorinated P(VDF-HFP) dielectric and the formation of electrical double layers by the movement of the EMIM-and TFSI-ion. [31,47] The high capacitance induces high charge carrier density, filling disorder-induced carrier traps at low gate bias voltage and facilitating smooth charge transport. [40][41][42] Moreover, electrolyte-gated perovskite transistors have been recently reported using conjugated polymers as interfacial functionalization layer (IFL).…”

“…This drastic improvement in the hole mobility of our conjugated polymer-capped perovskite OFETs compared to that of the control OFETs could be attributed to efficient bilayer channel formation and induction of a high charge carrier density in the hybrid perovskite-functionalized organic transistor channel due to the high-capacitance electrolyte dielectric and polymer-perovskite interactions. [30,31,44]…”

“…[26][27][28] Following the first demonstration of a perovskite transistor by Dimitrakopoulos et al, which achieved a hole mobility of ≈0.6 cm 2 V −1 s −1 , [29] diverse techniques and strategies have since been utilized to improve the charge-carrier mobility of emerging perovskite transistors in a bid to exceed those of conjugated polymers. [29][30][31][32][33][34] Our group recently demonstrated an interfacial functionalization strategy to passivate the perovskite surface with conjugated polymers, which enabled the use of highcapacitance electrolyte dielectrics. This approach allowed the fabrication and achievement of high-mobility perovskite transistors on rigid and flexible substrates.…”

“…This approach allowed the fabrication and achievement of high-mobility perovskite transistors on rigid and flexible substrates. [30,31] To improve the performance of OFETs, it is necessary to optimize the pivotal parts, including the contact electrodes, gate dielectric, and the active semiconducting layer. [35,36] Highcapacitance gate dielectric materials, such as cross-linked insulating polymers, [37][38][39] ionic composites, [40][41][42] high-k materials, [43][44][45] and polymer electrolytes, [46][47][48] have evolved for transistor technology.…”

Organic–inorganic hybrid perovskite materials and their application in transistors

“…Transistors based on FAPbI 3 / P3HT heterojunction exhibited an ultrahigh mobility of 24.55 cm 2 V À1 s À1 , which was a consequence of the interaction between perovskite and P3HT, more efficient hole injection, and optimized contact. 132 Varying the conjugated polymer also had the potential to elevate the device performance. A remarkable mobility of 30.87 cm 2 V À1 s À1 was observed from a Py1/MAPbI 3 FET.…”