Surface functionalized electrolyte-gated perovskite transistors with enhanced performance via insulating polymer additive

Nketia-Yawson, Vivian; Shim, Jae Won; Nketia-Yawson, Benjamin; Jo, Jea Woong

doi:10.1016/j.apsusc.2023.158297

Cited by 1 publication

(1 citation statement)

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“…[30,31] To improve the performance of OFETs, it is necessary to optimize the pivotal parts, including the contact electrodes, gate dielectric, and the active semiconducting layer. [35,36] Highcapacitance gate dielectric materials, such as cross-linked insulating polymers, [37][38][39] ionic composites, [40][41][42] high-k materials, [43][44][45] and polymer electrolytes, [46][47][48] have evolved for transistor technology. In this study, motivated by these early studies, we synthesized benzo[1,2-b:4,5-b']dithiophene-based conjugated polymer for high-performance OFETs and conjugated polymer-capped perovskite transistors using conventional and electrolyte gating media.…”

Section: Introductionmentioning

confidence: 99%

Hole Mobility Enhancement in Benzo[1,2‐b:4,5‐b']Dithiophene‐Based Conjugated Polymer Transistors through Directional Alignment, Perovskite Functionalization and Solid‐State Electrolyte Gating

Nketia‐Yawson,

Buer,

Ahn

et al. 2023

Macromol. Rapid Commun.

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Tunability in electronic and optical properties has been intensively explored for developing conjugated polymers and their applications in organic and perovskite‐based electronics. Particularly, the charge carrier mobility of conjugated polymer semiconductors has been deemed to be a vital figure‐of‐merit for achieving high‐performance organic field‐effect transistors (OFETs). In this study, the systematic hole carrier mobility improvement of benzo[1,2‐b:4,5‐b']dithiophene‐based conjugated polymer in perovskite‐functionalized organic transistors is demonstrated. In conventional OFETs with a poly(methyl methacrylate) (PMMA) gate dielectric, improvements in hole mobility of 0.019 cm2 V−1 s−1 are measured using an off‐center spin‐coating technique, which exceeds those of on‐center counterparts (0.22 ± 0.07 × 10−2 cm2 V−1 s−1). Furthermore, the mobility drastically increases by adopting solid‐state electrolyte gating, corresponding to 2.99 ± 1.03 cm2 V−1 s−1 for the control, and the best hole mobility is 8.03 cm2 V−1 s−1 (average ≈ 6.94 ± 0.59 cm2 V−1 s−1) for perovskite‐functionalized OFETs with a high current on/off ratio of >106. The achieved device performance would be attributed to the enhanced film crystallinity and charge carrier density in the hybrid perovskite‐functionalized organic transistor channel, resulting from the high‐capacitance electrolyte dielectric.

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