High-Luminosity Blue and Blue-Green Gallium Nitride Light-Emitting Diodes

Morkoç̌, H.; Mohammad, S. Noor

doi:10.1126/science.267.5194.51

Cited by 395 publications

(185 citation statements)

References 24 publications

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“…[1][2][3][4][5][6] Strain effects are particularly important for group-III nitrides because of the lack of native substrates. The growth on foreign substrates typically leads to the presence of built-in strain in heteroepitaxial nitride layers due to the difference in lattice parameters and thermal expansion coefficients between layers and substrates.…”

Section: Introductionmentioning

confidence: 99%

Elastic constants, composition, and piezolectric polarization in InxAl1−xN: Fromab initiocalculations to experimental implications for the applicability of Vegard's rule

et al. 2012

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We present a theoretical analysis on the applicability of Vegard's linear rule in In x Al 1−x N alloys in relation to strain related elastic and piezoelectric properties. We derive the elastic stiffness constants and biaxial coefficients, as well as the respective deviations from linearity (Vegard's rule) by using ab initio calculations. The stress-strain relationships to extract composition from the lattice parameters are derived in different coordinate systems for In x Al 1−x N with an arbitrary surface orientation. The error made in the composition extracted from the lattice parameters if the deviations from linearity are not taken into account is discussed for different surface orientations, compositions and degrees of strain in the In x Al 1−x N films. The strain induced piezoelectric polarization is analyzed for In x Al 1−x N alloys grown pseudomorphically on GaN. The polarization values are compared with those obtained from our experimental data for the lattice parameters. We establish the importance of the deviation from linearity to correctly determine the piezoelectric polarization and also a smooth, not particular piezoelectric response at GaN lattice matched conditions.

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Section: Introductionmentioning

confidence: 99%

Elastic constants, composition, and piezolectric polarization in InxAl1−xN: Fromab initiocalculations to experimental implications for the applicability of Vegard's rule

et al. 2012

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“…Blue LEDs (peak output at 450 nm) based on this rugged material are new items of commerce, and are inexpensive. They are optically quite efficient -more than 100 times brighter than Sic devices, the only other blue LED available [21]. We have shown that the GaN devices are capable of subnanosecond optical pulses.…”

Section: Optical Beaconsmentioning

confidence: 83%

Technology Development for a Neutrino AstrophysicalObservatory

Chaloupka¹,

Cole²,

Crawford³

et al. 1996

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We propose a set of technology developments relevant to the design of an optimized Cerenkov detector for the study of neutrino interactions of astrophysical interest. Emphasis is placed on signal processing innovations that enhance significantly the quality of primary data. These technical advances, combined with field experience from a follow-on test deployment, are intended to provide a basis for the engineering design for a kdometer-scale Neutrino Astrophysical Observatory.

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“…The extension into the green and blue wavelengths completes the visible spectrum allowing semiconductor technology to be used for applications such as large full color displays and traffic lights. 2,3 Early research into the nitrides outlined several problem areas, which hindered efforts to produce devices based on III-V nitride technology. Particularly the lack of p-GaN made the fabrication of efficient optical devices based on p-n junctions impossible, though some LEDs based on metal-insulator-semiconductors were fabricated.…”

Section: Introductionmentioning

confidence: 99%

NiIn as an Ohmic Contact to P-GaN

Ingerly

Chang

Chen

1999

MRS Internet j. nitride semicond. res.

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ABSRTACTBased on the criteria for the solid state exchange reaction with p-GaN, we have investigated the intermetallic compound NiIn as a possible ohmic contact. The contacts were fabricated by depositing NiIn on p-GaN films (p ~ 2 x 10 17 cm -3 ) using RF sputtering from a compound target. The as-deposited, NiIn contacts were found to be rectifying and using I-V characterization a Schottky barrier height of 0.82 eV was measured. Rapid thermal annealing of the contacts was shown to significantly decrease their resistance, with contacts annealed at 800°C for 1 min yielding the lowest resistance. When annealed at 800 °C for 1 min NiIn contacts exhibited a specific contact resistance of 8-9 x 10 -3 Ω cm 2 , as measured by the circular transmission line model. To allow a more universal comparison the more traditional Ni/Au contacts, processed under the same conditions, were used as a standard. Their measured specific contact resistance (ρ c = 1.2 -2.1 x 10 -2 Ω cm 2 ) was significantly higher than that of the NiIn contacts. Demonstrating that NiIn has promise as an ohmic contact to p-GaN and should be studied in greater detail. INTRODUCTIONIt has long been realized that the III-V nitrides have tremendous potential for optoelectronic devices operating in the blue and UV wavelengths as well as for use in high power-high temperature semiconductor devices. The III-V nitrides form a continuous alloy system whose direct band gap ranges from 6.2 eV (AlN) to 3.4 eV (GaN) to 1.9 eV (InN) at room temperature.1 This potentially allows the fabrication of high efficiency optical devices, such as Light Emitting Diodes (LEDs), which can operate from orange to the UV region. The extension into the green and blue wavelengths completes the visible spectrum allowing semiconductor technology to be used for applications such as large full color displays and traffic lights. 2,3Early research into the nitrides outlined several problem areas, which hindered efforts to produce devices based on III-V nitride technology. Particularly the lack of p-GaN made the fabrication of efficient optical devices based on p-n junctions impossible, though some LEDs based on metal-insulator-semiconductors were fabricated. 1,3 Only recently due to advances in ptype doping has GaN started to realize its potential and there are now nitride based devices available. However, the metal contact to p-GaN is an important concern since high contact resistance will substantially reduce the performance of GaN based devices. In fact, the high resistance of the metal/p-GaN contact is one of the most significant issues limiting laser diode performance.Most of the current work on finding low resistance metallizations to p-GaN has focused on high work function elemental metals deposited in multilayer structures. [4][5][6][7][8][9][10][11] This strategy is based on the Schottky model, which predicts that higher work function metals will result in lower Schottky barriers to p-type semiconductors. on metal/p-GaN contacts suggests that the Schottky model is at least partially a...

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High-Luminosity Blue and Blue-Green Gallium Nitride Light-Emitting Diodes

Cited by 395 publications

References 24 publications

Elastic constants, composition, and piezolectric polarization in InxAl1−xN: Fromab initiocalculations to experimental implications for the applicability of Vegard's rule

Elastic constants, composition, and piezolectric polarization in InxAl1−xN: Fromab initiocalculations to experimental implications for the applicability of Vegard's rule

Technology Development for a Neutrino AstrophysicalObservatory

NiIn as an Ohmic Contact to P-GaN

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