High indium content metamorphic (In,Al)As/(In,Ga)As heterojunction bipolar transistors

Monier, C.; Sawdai, D.; Cavus, A.; Sandhu, R.; Lange, M.; Wang, J.; Yamamoto, J.; Hsing, R.; Hayashi, S.; Noori, A.; Block, T.; Goorsky, Mark S.; Gutieffez-Aitken, A.

doi:10.1109/iciprm.2003.1205305

Cited by 6 publications

(5 citation statements)

References 6 publications

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“…5 Even with the vertical dimensions of the devices discussed here, high speed was already achieved. This 6.00 Å SHBT Gummel plot exhibits dc gain ͑␤͒ near 40.…”

Section: Resultsmentioning

confidence: 90%

“…The typical dimensions of this cross-hatch are a rms roughness of 5 nm at the top of the buffer ͑as measured over 80ϫ80 m 2 ͒ and a lateral distance between adjacent valleys of 3.5Ϯ1.0 m. Although these vertical and horizontal dimensions are of the same order as those of the device layer thicknesses and emitter widths, they have had no severe effects on the device fabrication or characteristics. 5 The common-emitter I -V curves for small-area ͑2ϫ10 m 2 ͒ devices of a 6.00 Å SHBT and a 6.00 Å DHBT are shown in Fig. The most significant improvement was the decrease in the base-emitter leakage current, especially significant because that also enabled the improvement achieved in dc gain.…”

Section: Resultsmentioning

confidence: 99%

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Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxy

Lange

Cavus

Monier

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inMolecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates J.Comparative studies of the epireadiness of 4 in. InP substrates for molecular-beam epitaxy growth Comparison of As-and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications J. Vac. Sci. Technol. B 22, 1565 (2004); 10.1116/1.1691412 Study of direct current characteristics of carbon-doped GaInP/GaAs heterojunction bipolar transistor grown by solid source molecular beam epitaxyIn this article we present results from heterojunction bipolar transistor ͑HBT͒ devices that were designed for low power consumption by taking advantage of the small bandgap of high-indium composition In 0.86 Ga 0.14 As in the base layer. These were grown by solid-source molecular-beam epitaxy. Both single-and double-HBT devices were grown and fabricated. The 6.00 Å lattice parameter of these device structures was accommodated by first growing metamorphic, relaxed, linearly graded In x Al 1Ϫx As buffers on semi-insulating InP substrates, grading from In 0.52 Al 0.48 As lattice-matched with InP at 5.87 Å to In 0.86 Al 0.14 As at 6.00 Å. The total thickness of each buffer was 1.2 m or greater. These graded buffer layers developed the crosshatched morphology that is associated with the strain-relaxation process. The density of threading dislocations reaching the buffer surface was measured by EPD to be as low as 2ϫ10 6 cm Ϫ2 . Although this density is still more than an order of magnitude greater than that measured for lattice-matched material on InP, these 6.00 Å HBT devices exhibited good electrical characteristics. For these electrical tests, both large ͑70ϫ70 m 2 ͒ and small ͑1.5ϫ10 or 2ϫ10 m 2 ͒ devices were fabricated. All devices exhibited significantly lower turn-on and knee voltages compared to the GaAs and lattice-matched In 0.52 Ga 0.48 As-on-InP HBT technologies. The 6.00 Å single HBT demonstrated a V BE ϳ0.4 V for operation at 1 mA compared to 0.7 V for lattice-matched In 0.52 Ga 0.48 As on InP and 1.3 V for GaAs. The 6.00 Å HBT approach additionally benefits from a favorable valence band alignment between the p-type In 0.86 Ga 0.14 As base and the n-type In 0.86 Al 0.14 As emitter, which reduces hole injection into the emitter and increases device current gain. The rf measurements of this structure exhibited a transistor cut-off frequency f T exceeding 100 GHz. Small double-HBT devices presented a breakdown voltage BV CEO Ͼ2 V, which was twice that of small single-HBT devices. This enables further vertical scaling of the device to reduce the collector transit time.

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“…5 Even with the vertical dimensions of the devices discussed here, high speed was already achieved. This 6.00 Å SHBT Gummel plot exhibits dc gain ͑␤͒ near 40.…”

Section: Resultsmentioning

confidence: 90%

Section: Resultsmentioning

confidence: 99%

Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxy

Lange

Cavus

Monier

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

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“…Although other devices produced using this process have been reported with P>40 and f/fma, both greater than 150 GHz [4], the layer structure employed for the samples used in these measurements yielded somewhat lower P (20-30 maximum) and f,/fmax (60-80 GHz, without de-embedded pad parasitics). Further fabrication details are published elsewhere [4,12,13].…”

Section: Introductionmentioning

confidence: 99%

Proton Tolerance of InAs Based HEMT and DHBT Devices

Currie

Harff

Pittelkow

et al. 2006

2006 IEEE Radiation Effects Data Workshop

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“…The graded buffer layer technique allows the engineer to tailor the end composition of the alloy semiconductor for the required device application. For microwave applications, it is undesirable to have a thick conducting buffer layer (4,5). However, with wafer bonding just the active layer can be transferred to the semi-insulating substrate.…”

Section: Introductionmentioning

confidence: 99%

Role of Dislocations in Hydrogen-Induced Exfoliation of Narrow Bandgap Semiconductors

et al. 2006

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To investigate the role of dislocations in the exfoliation process, metamorphic buffer layers were implanted with a dose of 1.5E16 H2+/cm2 at an energy of 150 KeV. Two profiles were examined: a compositionally graded InxAl1-xAs buffer layer grown by molecular beam epitaxy on InP with an InAs cap layer (TD density = 5E6 cm-2) and an InAs layer grown directly on InP (TD density = 4E8 cm-2). Subsequent annealing of these implanted structures at 150{degree sign}C for 10 minutes caused interstitial hydrogen to diffuse away from the implanted region and settle at low energy sites - strained regions around dislocations. 5 hours annealing at 75{degree sign}C produced uniform surface blistering for both samples at the implantation depth. This effect is explained by the increased diffusivity of hydrogen at higher temperatures.

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High indium content metamorphic (In,Al)As/(In,Ga)As heterojunction bipolar transistors

Cited by 6 publications

References 6 publications

Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxy

Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxy

Proton Tolerance of InAs Based HEMT and DHBT Devices

Role of Dislocations in Hydrogen-Induced Exfoliation of Narrow Bandgap Semiconductors

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