Proton Tolerance of InAs Based HEMT and DHBT Devices

Currie, S.; Harff, N. E.; Pittelkow, R.G.; Marshall, P.W.; Bergman, J.; Brar, B.; Hacker, J.B.; Gutierrez, A.; Monier, C.; Gilbert, Barry K.; Daniel, Erik S.

doi:10.1109/redw.2006.295470

2006 IEEE Radiation Effects Data Workshop 2006

DOI: 10.1109/redw.2006.295470

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Proton Tolerance of InAs Based HEMT and DHBT Devices

S. Currie

N. E. Harff

R.G. Pittelkow

et al.

Abstract: We present measurements of proton induced degradation in emerging low power high performance InAs based devices, including InAs/AlSb high electron mobility transistors (HEMT) and In0.86Ga0.14As base 6.0 A lattice constant double heterojunction bipolar transistor (DHBT) devices.

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Proton Tolerance of InAs Based HEMT and DHBT Devices

Abstract: We present measurements of proton induced degradation in emerging low power high performance InAs based devices, including InAs/AlSb high electron mobility transistors (HEMT) and In0.86Ga0.14As base 6.0 A lattice constant double heterojunction bipolar transistor (DHBT) devices.

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References 16 publications

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