High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition

Aoyagi, Yoshinobu; Takeuchi, Misaichi; Iwai, Sohachi; Hasegawa, Hideki

doi:10.1063/1.3641476

Cited by 39 publications

(33 citation statements)

References 19 publications

(18 reference statements)

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“…Therefore, numerous efforts have been undertaken to mitigate compensation by decreasing donor defects and increasing solubility of the dopants, increase the hole mobility by reducing the scattering rate, and increase the acceptor activation rate by reducing the activation energy through polarization field. The approaches include co-doping of Mg with Si or oxygen, [94,95] Mg delta-doping, [96,97] and Mg-doped AlxGa1-xN/AlN superlattice or AlxGa1-xN/AlyGa1-yN superlattice. [98,99] Some of the reports on the achievement of low p-type resistivities in high Al-molar fraction AlGaN are overviewed below.…”

Section: Doping Considerations In High Al-molar Fraction Alganmentioning

confidence: 99%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Ding¹,

Avrutin²,

Özgür³

et al. 2017

Preprint

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Abstract:We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of this writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice-and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p-and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

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Section: Doping Considerations In High Al-molar Fraction Alganmentioning

confidence: 99%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Ding¹,

Avrutin²,

Özgür³

et al. 2017

Preprint

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show abstract

“…The Wz structure consists of two interpenetrating hexagonal close-packed sub-lattices with different type of atom, offset along the c-axis by 5/8 of the cell height (5c/8). Three surfaces are of special importance in nitrides, which are (0001) c-planes, (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) a-planes, and (1-100) m-planes. Other surfaces could also be observed in nitrides nano-structures, i.e.…”

Section: Crystal Structure Of Nitridesmentioning

confidence: 99%

“…Other surfaces could also be observed in nitrides nano-structures, i.e. (1-102) r-planes, (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23) n-planes. For epitaxy GaN thin film or single crystals, determining the orientation is not straight-forward and will depend on growth conditions, substrates or doping.…”

Section: Crystal Structure Of Nitridesmentioning

confidence: 99%

“…[19][20][21][22][23] Recent advances in crystal growth technology have shown that the issues of low solubility and hydrogen passivation can, at least to some extent, be overcome by using non-equilibrium growth techniques and high-temperature annealing. However, alleviating the more fundamental problem of high activation energies has, to date, not yet been satisfactorily achieved.…”

Section: Present Solution For P Doping Difficultiesmentioning

confidence: 99%

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Comprehensive Theoretical and Experimental Studies on Iii-Nitrides, Doping, Nano-Structures and Leds

Li¹,

Liu²,

Yi³

et al. 2017

III-Nitride Materials, Devices and Nano-Structures

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Even though III-Nitrides have demonstrated their ample application in solid-state light, display, laser, detector and high-power RF/switching device, many other new breakthroughs on fundamental physics and fabrication techniques are still highly desired to lead to their next expansion of the research and application field in the near future. In this chapter, the general properties of III-nitrides as well as their ternary and quaternary were briefly reviewed. Specifically, we mainly focused on the underlying physics of p doping challenge, nitrides nano-structures and their application on LEDs. We presented an overview of some main results and progress in highly effective p doping for nitrides. Some promising strategies to address the issue of p doping challenge were also introduced. Furthermore, we describe the prevailing GaN nanowire fabrication methods including wet etching and selective area growth and their application in novel LED structures.

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“…10 Hence, realizing p-type Al-rich AlGaN has become a worldwide problem in the nitride community. Many methods have been proposed to improve p-type conduction in group-III nitrides, such as polarization doping in compositionally graded AlGaN alloys, [11][12][13] alternative acceptor-donor codoping, 14,15 non-equilibrium growing with pulse doping, 16 and Mg δ-doping. 17 However, to the best of our knowledge, only several experiments are focused on the p-type conduction of Al-rich AlGaN alloys.…”

Section: Introductionmentioning

confidence: 99%

Improving p-type doping efficiency in Al0.83Ga0.17N alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice with MgGa-ON δ-codoping: Role of O-atom in GaN monolayer

et al. 2015

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We calculate Mg-acceptor activation energy EA and investigate the influence of O-atom, occupied the Mg nearest-neighbor, on EA in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al0.83Ga0.17N disorder alloy, using first-principles calculations. We find that the N-atom bonded with Ga-atom is more easily substituted by O-atom and nMgGa-ON (n = 1-3) complexes are favorable and stable in the SL. The O-atom plays a dominant role in reducing EA. The shorter the Mg-O bond is, the smaller the EA is. The Mg-acceptor activation energy can be reduced significantly by nMgGa-ON δ-codoping. Our calculated EA for 2MgGa-ON is 0.21 eV, and can be further reduced to 0.13 eV for 3MgGa-ON, which results in a high hole concentration in the order of 1020 cm−3 at room temperature in (AlN)5/(GaN)1 SL. Our results prove that nMgGa-ON (n = 2,3) δ-codoping in AlN/GaN SL with ultrathin GaN-layer is an effective way to improve p-type doping efficiency in Al-rich AlGaN.

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High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition

Cited by 39 publications

References 19 publications

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Comprehensive Theoretical and Experimental Studies on Iii-Nitrides, Doping, Nano-Structures and Leds

Improving p-type doping efficiency in Al0.83Ga0.17N alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice with MgGa-ON δ-codoping: Role of O-atom in GaN monolayer

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