Comprehensive Theoretical and Experimental Studies on Iii-Nitrides, Doping, Nano-Structures and Leds

Abstract

Even though III-Nitrides have demonstrated their ample application in solid-state light, display, laser, detector and high-power RF/switching device, many other new breakthroughs on fundamental physics and fabrication techniques are still highly desired to lead to their next expansion of the research and application field in the near future. In this chapter, the general properties of III-nitrides as well as their ternary and quaternary were briefly reviewed. Specifically, we mainly focused on the underlying physics of p doping challenge, nitrides nano-structures and their application on LEDs. We presented an overview of some main results and progress in highly effective p doping for nitrides. Some promising strategies to address the issue of p doping challenge were also introduced. Furthermore, we describe the prevailing GaN nanowire fabrication methods including wet etching and selective area growth and their application in novel LED structures.

Mask-free three-dimensional epitaxial growth of III-nitrides

“…In principle, 3D structures offer high surface-to-volume ratios, semi-and nonpolar surfaces and high crystalline quality [1]. The semiconductor system of III-nitrides is one of the most versatile group of binary compounds, e.g., AlN, GaN and InN, and their ternary and quaternary alloys, with attractive physical, optical and electronic properties [2][3][4]. In general, III-nitrides are model compounds for electronic and optoelectronic devices, such as light emitters in a wide optical spectrum, detectors and high-power amplifiers.…”