High holding voltage SCRs with segmented layout for high‐robust ESD protection

Xiaozong, Huang; Liu, Zhiwei; Liu, Fan; Liu, Jizhi; Song, Wenqiang

doi:10.1049/el.2017.2390

Cited by 12 publications

(8 citation statements)

References 6 publications

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“…However, the holding voltage of SCR devices are insensitive to the variation of lateral dimension. [4,10] Therefore, the lateral dimension increase of 2 µm is not the main reason for the increase in the holding voltage of EGDTSCR. In the proposed EGDTSCR, the ESD current discharge capacity of the surface gated diode is stronger than that of the parasitic PNP + in MLSCR, which is the main reason for that the EGDTSCR can achieve a higher holding voltage than the MLSCR.…”

Section: Tlp Measurements and Discussionmentioning

confidence: 99%

“…Under the constraints of chip area, segmentation techniques are introduced to reduce emitter injection efficiency of SCR device and achieve relatively high holding voltages. [8][9][10] However, the segmentation topology may cause current crowding, resulting in a deterioration in the ESD robustness. [11] Moreover, none of the above methods can simultaneously increase the holding voltage while maintaining a high failure current (I t2 ).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications*

Song

Hou

et al. 2020

Chinese Phys. B

Self Cite

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A robust electron device called the enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR) for electrostatic discharge (ESD) protection applications has been proposed and implemented in a 0.18-μm 5-V/24-V BCD process. The proposed EGDTSCR is constructed by adding two gated diodes into a conventional ESD device called the modified lateral silicon-controlled rectifier (MLSCR). With the shunting effect of the surface gated diode path, the proposed EGDTSCR, with a width of 50 μm, exhibits a higher failure current (i.e., 3.82 A) as well as a higher holding voltage (i.e., 10.21 V) than the MLSCR.

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Section: Tlp Measurements and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications*

Song

Hou

et al. 2020

Chinese Phys. B

Self Cite

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show abstract

“…Of course, static electricity may cause damage to the chip in any link, and this damage is generally fatal 8 . When charged objects touch the pins of the chip, or the pins of the chip with internal charges touch the external conductors, electrostatic charges will flow in or out from the pins of the chip, and these discharging processes may damage the internal circuits of the chip, reduce their performance or make them unusable 9 . Although electronic components are developing in the direction of intelligence, miniaturization and reliability, ESD phenomenon is still the primary problem to be solved in integrated circuits.…”

Section: Introductionmentioning

confidence: 99%

ESD protection of semiconductor devices and integrated circuits based on immune algorithm

2023

Third International Conference on Electronics, Electrical and Information Engineering (ICEEIE 2023)

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The rapid growth of communication and information industry is inseparable from electronic technology. When the semiconductor device with charge is powered on, the charge discharge path forms an instantaneous high pulse to form a conductive path, and the high-energy pulse absorbed by the device pin damages the chip. The main function of biological immune system is to detect, identify and kill non-self substances called antigens in vivo and in vitro, and its essence is on-line autonomous fault diagnosis and health monitoring in vivo. In this article, a fault diagnosis model of semiconductor devices and integrated circuits based on artificial immune algorithm (AIA) is proposed. By collecting the characteristic data of circuits in various working states, the working states of integrated circuits are analyzed and predicted, so as to realize the electrostatic discharge (ESD) protection of semiconductor devices and integrated circuits. The simulation results show that compared with the traditional particle swarm optimization (PSO) algorithm, this method has obvious advantages in the later stage of operation, and the error is reduced by 20.85%. By introducing this model into the design of integrated circuits, the performance of circuits can be optimized and analyzed, the efficiency of circuit design can be improved, and the problem of multi-index conflict in integrated circuits can be solved well.

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“…The ESD protection diodes are considered to be promising in advanced technology as an ESD protection device [ 6 , 7 , 8 ]. The diode-string silicon-controlled rectifier (DSSCR) with high robustness is also considered as the ESD protection device for previous technology nodes [ 10 , 11 , 12 , 13 , 14 , 15 ], but it is no longer suitable for the 7 nm technology due to its high leakage and large snapback for latch-up. ESD design for the FinFET process is still a great challenge.…”

Section: Introductionmentioning

confidence: 99%

Silicon-Controlled Rectifier Embedded Diode for 7 nm FinFET Process Electrostatic Discharge Protection

Zhu

Dong

et al. 2022

Nanomaterials

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A new silicon-controlled rectifier embedded diode (SCR-D) for 7 nm bulk FinFET process electrostatic discharge (ESD) protection applications is proposed. The transmission line pulse (TLP) results show that the proposed device has a low turn-on voltage of 1.77 V. Compared with conventional SCR and diode string, the proposed SCR-D has an additional conduction path constituting by two additional inherent diodes, which results in a 1.8-to-2.2-times current surge capability as compared with the simple diode string and conventional SCR with the same size. The results show that the proposed device meets the 7 nm FinFET process ESD design window and has already been applied in actual circuits.

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High holding voltage SCRs with segmented layout for high‐robust ESD protection

Cited by 12 publications

References 6 publications

Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications*

Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications*

ESD protection of semiconductor devices and integrated circuits based on immune algorithm

Silicon-Controlled Rectifier Embedded Diode for 7 nm FinFET Process Electrostatic Discharge Protection

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