High Growth Rate of Microcrystalline Silicon Films Prepared by ICP-CVD with Internal Low Inductance Antennas

Abstract

The plasma parameters in ICP-CVD system with internal low inductance antennas (LIA) were diagnosed by Langmuir probe. The ions density (Ni) reached 10 11-10 12 cm −3 , and the electron temperature (Te) was below ca. 2 eV, which was slightly decreased with applied power. A p-type hydrogenated microcrystalline silicon (µc-Si:H) film was prepared on glass substrate. After optimization of the processing parameters in flow ratio of SiH4:B2H6:H2, a high quality µc-Si:H film with deposition rate above 1.0 nm/s was achieved in this work.

Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD

“…A peak at around 28.5° is observed in all spectra. This peak is attributed to the Si crystal facets of (111) and is due to the substrate contribution. , However, in the case of the sample with the as-deposited SiN x , a shift of this peak position to 28.8° is observed. It can indicate a tensile strain of Si.…”

Nanocrystalline Si:H films made by inductively coupled plasma using internal low inductance antenna

“…Details of the system were reported elsewhere [11][12][13]. Four vertically displaced U-shaped LIAs, arrayed in a scalable manner, were installed in the vacuum chamber at optimal positions to increase the plasma uniformity over an area of 30 Â 30 cm 2 .…”