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It is demonstrated for the first time that amorphous bismuth iron garnet films can be crystallized within capacitively coupled oxygen plasmas at temperatures approximately 100 °C lower than required using conventional thermal annealing. We characterize the plasma optical emissions at high pressures (2 Torr–5 Torr) and high rf powers (500 W–800 W) and show that film crystallization is nevertheless related to thermal conditions generated in the plasma. It is demonstrated that these thermal conditions are related to the concentration of the dominant oxygen species O and O+ in the plasma, which, in turn, are a function of the rf power and pressure. The plasma treated garnet Faraday rotation and optical transmission are shown to be comparable with conventional oven or rapid thermal annealing.

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We report on the deposition, crystallization, and magnetic properties of cerium substituted europium iron garnet having the general form of (CeEu) 3 (FeGa) 5 O 12. The films were deposited on gallium gadolinium garnet and fused quartz substrates using biased target ion beam deposition at a rate of 2.7 nm/min. The Ce:EIG thin film has a composition of Ce 1.3 Eu 1.7 Fe 3 Ga 1.6 O 12 , with 30% of the Ce in the 4+ oxidation state and the remainder as Ce 3+. The film exhibits the primary peaks of the garnet phase in X-ray diffraction patterns. In the visible part of the electromagnetic spectrum, the film on GGG exhibits a Faraday rotation of 3.3 °/µm with coercivity of 0.58 kOe whereas the film on fused quartz exhibits 1.1 °/µm with a coercivity of 0.8 kOe. The film on the fused quartz substrate has a saturation magnetization of 17 emu/cm 3 on at room temperature.