High-Gain Inverters Based on WSe₂ Complementary Field-Effect Transistors

Abstract

In this work, the operation of n- and p-type field-effect transistors (FETs) on the same WSe2 flake is realized,and a complementary logic inverter is demonstrated. The p-FET is fabricated by contacting WSe2 with a high work function metal, Pt, which facilities hole injection at the source contact. The n-FET is realized by utilizing selective surface charge transfer doping with potassium to form degenerately doped n+ contacts for electron injection. An ON/OFF current ratio of >10(4) is achieved for both n- and p-FETs with similar ON current densities. A dc voltage gain of >12 is measured for the complementary WSe2 inverter. This work presents an important advance toward realization of complementary logic devices based on layered chalcogenide semiconductors for electronic applications.

High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors

“…The wide family of transition metal dichalcogenides (TMDs) has proven to be the most promising, offering quite a large variety of compounds, large tunability of properties and flexibility in potential practical applications [2]. Electronic and optoelectronic devices based on various TMDs have been demonstrated [3,4,5]. The search for other families of 2D materials exhibiting the same properties, existing in stable atomic layers and offering similar potential for applications together with a natural abundance and a low production cost is still very active and deserves a strong effort.…”

Occupied and unoccupied electronic structure of Na doped MoS2(0001)

“…While the exposure of Na to the MoS 2 (0001) surface leads to the expected n-type doping shifts of the bands, 5 this shift in the band binding energies is wave vector independent for the occupied bands, not seen in the case of alkali metal intercalation. 17 From the different shifts seen in photoemission and inverse photoemission we are led to the conclusion that Na exposure increases the metallicity of MoS 2 (0001), consistent with theory.…”

“…Indeed, alkali metal potassium doping has been used to make an n-doped field effect transistor to construct an inverter based on WSe 2 . 5 The MX 2 -Na interaction is, however, not only relevant for electronic applications but also in several different areas: for instance, sodium-ion batteries (SIBs) have been discussed 6,7 as an alternative to lithium ion batteries and 2-D layered nanomaterials, such as the MX 2 , may be capable of accommodating the large volumetric strains during charging and discharging, while remaining high-capacity sodium host materials. In addition, alkali metal adsorption has significant influence on the catalytic properties of MoS 2 .…”

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

“…To achieve a single-2D-material CMOS technology, WSe 2 is arguably a more promising semiconductor than the more explored MoS 2 because of the more balanced conduction and valence band edges to different work functions metals and symmetric electron and hole effective mass. An integrated WSe 2 CMOS technology has been demonstrated using gas-phase doping 13 . The device shows however short lifetime in air, and the absence of rail-to-rail performance indicates significant static leakage current between the supply line and ground, which leads to large power consumption.…”