High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors

Barreteau, Céline; Michon, Baptiste; Besnard, Céline; Giannini, E.

doi:10.1016/j.jcrysgro.2016.03.019

Cited by 141 publications

(95 citation statements)

References 28 publications

(42 reference statements)

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“…X‐ray diffraction (XRD) was performed to characterize the crystallographic polytype and crystal structure. As shown in Figure d, there are four peaks centered at 13.9°, 27.9°, 42.4°, and 57.6°, arising from the diffraction of (20‐1), (40‐2), (60‐3), and (80‐4) planes, which are consistent with previously reports . The XPS was also used to determine the binding energies of GeP crystal sample as shown in Figure e, f. One peak located at 30.21 eV is identified to Ge 3d .…”

Section: Resultssupporting

confidence: 85%

Two‐Dimensional GeP‐Based Broad‐Band Optical Switches and Photodetectors

Nie

Wang

et al. 2019

Advanced Optical Materials

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photonics and optoelectronics is the lack of materials with broad-band optical response and strong light-matter interaction. Therefore, it is an urgent need and many efforts have been devoted to searching for this kind of novel materials. [2][3][4][5] The broad-band optical response of 2D nanomaterial is related to the unique band structure and electronic properties. [1] Graphene exhibits a wide-spectral photonic response from ultraviolet to the radio-wave regimes owing to its gapless and conical-shape band structure. However, lack of intrinsic bandgap makes graphene-based devices suffer from relatively small on/off ratio, large dark current, and poor photo response. The relative low absorption and high non-saturable loss of graphene in optical response limit its extensive applications. [6][7][8][9] Following graphene, the most studied 2D transition metal dichalcogenides (TMDCs) possess a bandgap ranging from 1.0 to 2.0 eV, indicating their practical optoelectronic applications are not available in midinfrared (MIR) wavelength range. [10,11] After graphene and TMDCs, black phosphorus (BP), the most thermodynamically stable allotrope of phosphorus, has been thoroughly studied as a novel 2D layered material since early 2014. [12] It has triggered significant interests in both scientific research and potential electronic, optoelectronic, and biomedicine applications because of its unique and exotic properties. [13][14][15] Layered BP has a direct bandgap with layer-dependent variation over ≈0.3-2.0 eV, which gives rise to broad-band optical properties from visible to MIR region. The intrinsic layer-dependent direct bandgap gives rise to high on/off ratio and low dark current for electronic devices and makes BP an appropriate 2D material for MIR photonic applications. Moreover, the bandgap of BP can be efficiently tuned by electrical gating, which should pave the way for optoelectronic devices. [16] BP presents puckered structure with in-plane anisotropy, which results in specific dichroic optical properties of light absorption and photoluminescence. [17] However, easy oxidation under ambient environment is the biggest obstacle that significantly impedes its practical applications. [14,[18][19][20][21][22] Therefore, how to improve the long-term stability of BP has become a challenge.Germanium phosphide (GeP), a typical 2D group IV-V semiconductor, has attracted significant attention due to the advantages of higher thermodynamic stability than black phosphorus (BP), widely tunable bandgap, high carrier mobility, and in-plane anisotropy. However, its photonic and optoelectronic properties have not been extensively explored so far. Herein, large size and high-quality GeP single bulk crystal is successfully grown by flux method and stripped into 2D nanosheets with liquid phase exfoliation (LPE) and spin-coating methods. The broad-band photonic and optoelectronic properties of 2D GeP nanosheets are systematically investigated. First principles calculations are performed to verify its widely tunable bandgap from 0.43 eV f...

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Section: Resultssupporting

confidence: 85%

Two‐Dimensional GeP‐Based Broad‐Band Optical Switches and Photodetectors

Nie

Wang

et al. 2019

Advanced Optical Materials

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“…By melt growth method, cleavable layered materials such as GeP and SiAs bulk crystals have been successfully synthesized in 2016 . In the case of V‐V binary materials, SbAs single crystals with 1 mm per side have been prepared in 2013 .…”

Section: Realizing 2d V‐v Binary Materialsmentioning

confidence: 99%

2D V‐V Binary Materials: Status and Challenges

et al. 2019

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The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.201902352. 2D phosphorene, arsenene, antimonene, and bismuthene, as a fast-growing family of 2D monoelemental materials, have attracted enormous interest in the scientific community owing to their intriguing structures and extraordinary electronic properties. Tuning the monoelemental crystals into bielemental ones between group-VA elements is able to preserve their advantages of unique structures, modulate their properties, and further expand their multifunctional applications. Herein, a review of the historical work is provided for both theoretical predictions and experimental advances of 2D V-V binary materials. Their various intriguing electronic properties are discussed, including band structure, carrier mobility, Rashba effect, and topological state. An emphasis is also given to their progress in fabricated approaches and potential applications. Finally, a detailed presentation on the opportunities and challenges in the future development of 2D V-V binary materials is given.

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“…SiP and SiAs bulk layered structures were also studied by Beck and Stickler [13]. Recently, bulk single crystals of GeP, GeAs, SiP and SiAs have been successfully grown by melt-growth under high pressure in a cubic anvil hot press [14]. As an exciting matter of fact concerning these bulk structures, due to the weak van der Waals interlayer interactions, experimental realization of their 2D structures can be accomplished efficiently by exfoliation.…”

Section: Introductionmentioning

confidence: 99%

Anisotropic mechanical properties and strain tuneable band-gap in single-layer SiP, SiAs, GeP and GeAs

Mortazavi

Rabczuk

2018

Physica E: Low-dimensional Systems and Nanostructures

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Group IV-V-type two-dimensional (2D) materials, such as GeP, GeAs, SiP and SiAs with anisotropic atomic structures, have recently attracted remarkable attention due to their outstanding physics. In this investigation, we conducted density functional theory simulations to explore the mechanical responses of these novel 2D systems. In particular, we explored the possibility of band-gap engineering in these 2D structures through different mechanical loading conditions. First-principles results of uniaxial tensile simulations confirm anisotropic mechanical responses of these novel 2D structures, with considerably higher elastic modulus, tensile strength and stretchability along the zigzag direction as compared with the armchair direction.Notably, the stretchability of considered monolayers along the zigzag direction was found to be slightly higher than that of the single-layer graphene and h-BN. The electronic band-gaps of energy minimized single-layer SiP, SiAs, GeP and GeAs were estimated by HSE06 method to be 2.58 eV, 2.3 eV, 2.24 eV and 1.98 eV, respectively. Our results highlight the strain tuneable band-gap character in singlelayer SiP, SiAs, GeP and GeAs and suggest that various mechanical loading conditions can be employed to finely narrow the electronic band-gaps in these structures.

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High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors

Cited by 141 publications

References 28 publications

Two‐Dimensional GeP‐Based Broad‐Band Optical Switches and Photodetectors

Two‐Dimensional GeP‐Based Broad‐Band Optical Switches and Photodetectors

2D V‐V Binary Materials: Status and Challenges

Anisotropic mechanical properties and strain tuneable band-gap in single-layer SiP, SiAs, GeP and GeAs

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