High gain, high efficiency, low voltage, medium power Si-bipolar transistor suitable for integration

Rijs, F. van; Dekker, R.; Magnee, P.H.C.; Vanoppen, R.R.J.; Heijden, E. van der; Balm, B.N.; Colussi, L.C.

doi:10.1109/rfic.1997.598732

Cited by 3 publications

(1 citation statement)

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“…Because of the low breakdown voltages for fast CMOS devices, other technologies, such as GaAs HBT [26], [27], Si bipolar [28], [29], SiGe HBT [30]- [32], and low-voltage LDMOS [33], [34], have so far dominated the small-size PAs. See [35] for CMOS vs. GaAs comparison for mobile phone PAs, and [36] for comparison of different bipolar technologies for similar applications.…”

Section: A Cmos For Wireless Socmentioning

confidence: 99%

A Review of Watt-Level CMOS RF Power Amplifiers

Johansson

Fritzin

2014

IEEE Trans. Microwave Theory Techn.

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Abstract-This paper reviews the design of watt-level integrated CMOS RF power amplifiers (PAs) and state-of-the-art results in the literature. To reach watt-level output power from a single-chip CMOS PA, two main strategies can be identified: use of high supply voltage, and use of matching and power combination. High supply voltage limits are closely related to device design in the fabrication process. However, the maximum operating voltage can be improved by amplifier class selection, circuit solutions, and process modifications or mask changes. High output power can also be reached by the use of on-chip matching and power combination, commonly using on-chip transformers. Reliability often sets the limits for the PA design, and PA degradation mechanisms are reviewed. A compilation of state-of-the-art published results for linear and switched wattlevel PAs, as well as a few fully integrated CMOS PAs, is presented and discussed.

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