High-frequency time-dependent breakdown of SiO/sub 2/

Rosenbaum, Elyse; Hu, Chenming

doi:10.1109/55.82056

Cited by 42 publications

(7 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Once the stress is switched to an AC pulse, T BD decreases dramatically, see Fig 3 . For most reliability phenomena (e.g., TDDB, BTI, SILC), typically the AC lifetime is either larger (with recovery) or equal (when recovery is absent) to the derated DC lifetime of the capacitor [14][15][16]. In ferroelectrics, however, the AC TDDB lifetime is orders of magnitude smaller than that at DC bias (Fig.…”

Section: The Puzzle Of Ac Lifetime and Hot Atom Damagementioning

confidence: 99%

Hot atom damage (HAD) limited TDDB lifetime of ferroelectric memories

Masuduzzaman

Alam

2013

2013 IEEE International Electron Devices Meeting

View full text Add to dashboard Cite

The AC/DC dielectric lifetime (TDDB) of ferroelectric materials have traditionally been interpreted similar to a classical gate oxide. In this paper, we demonstrate a fundamentally different kinetic mechanism of damage involving hot atom (HAD) in ferroelectric materials to interpret the severe reduction of AC lifetime, coupled with the counterintuitive increase in the Weibull slope. We show that, beyond a critical operating condition, the atoms at the domain walls are heated by the AC field, as they shuttle across the double-well energy landscape of such materials. An elegantly simple analytical model (i) interprets critical TDDB experiments, (ii) suggests strategies (e.g., pulse shaping) to minimize HAD significantly, and (iii) predicts device lifetime at arbitrary operating conditions.

show abstract

Section: The Puzzle Of Ac Lifetime and Hot Atom Damagementioning

confidence: 99%

Hot atom damage (HAD) limited TDDB lifetime of ferroelectric memories

Masuduzzaman

Alam

2013

2013 IEEE International Electron Devices Meeting

View full text Add to dashboard Cite

show abstract

“…In the short pulsewidth regime (less than 100 ns), there is a significant increase in , while for pulses of 100 ns and longer, remains essentially unchanged. The increase of for short pulses has already been observed in thicker SiO barriers, where it was attributed to a combination of charge trap creation and trapped charge relaxation [9]. However, the observed increase of by three orders of magnitude in the MgO tunnel junction data is much larger than what could be expected according to [5].…”

Section: Resultsmentioning

confidence: 63%

Pulsewidth Dependence of Barrier Breakdown in MgO Magnetic Tunnel Junctions

et al. 2008

View full text Add to dashboard Cite

Dependence of time-dependent dielectric breakdown with pulsewidth was investigated on MgO magnetic tunnel junctions. Barrier breakdown measurements were performed using different pulsewidths, from 10 ns up 1 s. The equivalence of the breakdown results between DC and pulsed voltage experiments was established using the total cumulated pulse time under electrical stress as the relevant parameter. Two different breakdown regimes were identified: the first one corresponding to pulses longer than 100 ns up to the DC limit and a second regime for pulses shorter than 100 ns. The barrier lifetime is increased for pulsewidths lower than 100 ns pulses. The breakdown process was shown to be thermally activated, but the longer lifetime at shorter pulses cannot be simply explained assuming a lower temperature during the pulse application.Index Terms-Breakdown voltage, magnetic random access memory (MRAM), magnetic tunnel junction (MTJ), pulsewidth.

show abstract

“…Previously, other studies have reported on the effects of highfrequency dynamic stress on conventional [2] and reoxidized nitrided oxides [3]. In this letter, we report the first investigation of device performance under high-field dynamic stressing for n-MOSFET's with N,O-annealed gate oxides (oxynitrides).…”

Section: Introductionmentioning

confidence: 91%

Degradation of N/sub 2/O-annealed MOSFET characteristics in response to dynamic oxide stressing

Chen

Liu

Krick

et al. 1993

IEEE Electron Device Lett.

Self Cite

View full text Add to dashboard Cite

The performance of n-MOSFETs with furnace N,O-annealed gate oxides under dynamic Fowler-Nordheim bipolar stress was studied and compared with that of conventional oxide (OX). Time-dependent dielectric breakdown at high frequency was shown to be improved for the N,O-annealed devices compared with that for devices with OX. In addition, a smaller V, shift for nitrided samples after stress was found. The shift decreased with increasing stressing frequency and annealing temperature. Measurements of both G , and Dit revealed a "peak" frequency at which the degradation was the worst. A hole trapping/migration model has been proposed to explain this.

show abstract

High-frequency time-dependent breakdown of SiO/sub 2/

Cited by 42 publications

References 7 publications

Hot atom damage (HAD) limited TDDB lifetime of ferroelectric memories

Hot atom damage (HAD) limited TDDB lifetime of ferroelectric memories

Pulsewidth Dependence of Barrier Breakdown in MgO Magnetic Tunnel Junctions

Degradation of N/sub 2/O-annealed MOSFET characteristics in response to dynamic oxide stressing

Contact Info

Product

Resources

About