Degradation of N/sub 2/O-annealed MOSFET characteristics in response to dynamic oxide stressing

Abstract

The performance of n-MOSFETs with furnace N,O-annealed gate oxides under dynamic Fowler-Nordheim bipolar stress was studied and compared with that of conventional oxide (OX). Time-dependent dielectric breakdown at high frequency was shown to be improved for the N,O-annealed devices compared with that for devices with OX. In addition, a smaller V, shift for nitrided samples after stress was found. The shift decreased with increasing stressing frequency and annealing temperature. Measurements of both G , and Dit revealed a "peak" frequency at which the degradation was the worst. A hole trapping/migration model has been proposed to explain this.

Rapid thermal post-metallization annealing effect on thin gate oxides

“…High quality thin oxide devices are necessary in VLSI technology. Many works had been done on how to grow high quality oxide layer, such as nitride oxides [1], reoxided nitrided oxides [2,3], or N20 oxides [4,5], etc. In addition, a few works [6,7] reported that the post-metallization annealing (PMA) process can also affect the performance of MOS devices.…”