High frequency noise of MOSFETs. II. Experiments

Chen, C.H.; Deen, M. Jamal; Yan, Z.X.; Schröter, M.; Enz, Christian

doi:10.1016/s0038-1101(98)00193-2

Cited by 28 publications

(8 citation statements)

References 6 publications

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“…Finally, figure 6 shows the extracted channel thermal noise as a function of V GS for five different channel lengths. As expected [13], [14], the channel thermal noise increases when the channel length decreases.…”

Section: Resultssupporting

confidence: 79%

Channel Noise Current in Deep Sub-Micron MOSFETs

Chen

Deen²,

Matloubian³

et al. 2000

30th European Solid-State Device Research Conference

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An extraction method to obtain the channel noise current in deep-submicron MOSFETs directly from DC, scattering parameter and RF noise measurements is presented. Extracted channel thermal noise from long channel devices is consistent with the long channel theory (i d 2 /∆f = γ 4kTg do with γ =2/3 in saturation). The value of γ can increase up to 1.3 for a 0.18µm device. Extracted channel thermal noise as a function of bias for five different channel lengths is also presented.

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Section: Resultssupporting

confidence: 79%

Channel Noise Current in Deep Sub-Micron MOSFETs

Chen

Deen²,

Matloubian³

et al. 2000

30th European Solid-State Device Research Conference

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“…Section 3 analyzes both the experimental results and the model validation. Particular attention is devoted to the analysis of the obtained noise parameters with respect to the operating bias condition, since the study of the bias dependence of the microwave noise modeling for CMOS technology is of fundamental importance [11,16,[23][24][25][26]. Finally, Section 4 presents the main remarks.…”

Section: Introductionmentioning

confidence: 99%

Microwave noise modeling of FinFETs

Crupi

Caddemi

Schreurs

et al. 2011

Solid-State Electronics

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“…Since NFmin is proportional to 1/(gm1/2) the increase of minimum noise figure is expected. The NFmin, obtained for the LxW=0.35x200 tm transistor lies in the range of the state of art n type MOSFETs [8].…”

Section: The Devices DC Characteristicsmentioning

confidence: 67%

Small-Signal Model and Microwave Noise Performance of the 0.35?m n and p Type MOSFETs, Scaling Down

Sakalas

Zirath

Litwin

2000

30th European Microwave Conference, 2000

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DC, RF and noise parameters of the p and n type MOSFETs were investigated. The zero field mobility, output conductance and transconductance were extracted. The complete small signal model was obtained from the combined direct and optimization method. Noise parameters were measured for the set of devices. Wide gate (200 gm) n-MOSFETs exhibited minimum noise figure around 2.5 dB at 6 GHz frequency, which was found lower than for the transistors with narrow (50 gm) gate. The noise performance of the p-MOSFETs was found worse in comparison to n-MOSFETs. The noise model for both p and n type MOSFETs was extracted.

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High frequency noise of MOSFETs. II. Experiments

Cited by 28 publications

References 6 publications

Channel Noise Current in Deep Sub-Micron MOSFETs

Channel Noise Current in Deep Sub-Micron MOSFETs

Microwave noise modeling of FinFETs

Small-Signal Model and Microwave Noise Performance of the 0.35?m n and p Type MOSFETs, Scaling Down

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